High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor
AbstractIn this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions. View Full-Text
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Al-Hardan, N.H.; Abdul Hamid, M.A.; Ahmed, N.M.; Jalar, A.; Shamsudin, R.; Othman, N.K.; Kar Keng, L.; Chiu, W.; Al-Rawi, H.N. High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor. Sensors 2016, 16, 839.
Al-Hardan NH, Abdul Hamid MA, Ahmed NM, Jalar A, Shamsudin R, Othman NK, Kar Keng L, Chiu W, Al-Rawi HN. High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor. Sensors. 2016; 16(6):839.Chicago/Turabian Style
Al-Hardan, Naif H.; Abdul Hamid, Muhammad A.; Ahmed, Naser M.; Jalar, Azman; Shamsudin, Roslinda; Othman, Norinsan K.; Kar Keng, Lim; Chiu, Weesiong; Al-Rawi, Hamzah N. 2016. "High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor." Sensors 16, no. 6: 839.
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