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Sensors 2016, 16(6), 839; doi:10.3390/s16060839

High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor

1
School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia (UKM), 43600 Bangi, Selangor, Malaysia
2
School of Physics, Universiti Sains Malaysia (USM), 11800 Penang, Pulau Pinang, Malaysia
3
Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), 43600 Bangi, Selangor, Malaysia
4
Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur, Malaysia
5
School of Electrical and Electronic Engineering—Universiti Sains Malaysia (USM), 14300 Nibong Tebal, Pulau Pinang, Malaysia
*
Authors to whom correspondence should be addressed.
Academic Editor: Ki-Hyun Kim
Received: 9 March 2016 / Revised: 4 May 2016 / Accepted: 25 May 2016 / Published: 7 June 2016
(This article belongs to the Special Issue The Use of New and/or Improved Materials for Sensing Applications)
View Full-Text   |   Download PDF [2714 KB, uploaded 7 June 2016]   |  

Abstract

In this study, porous silicon (PSi) was prepared and tested as an extended gate field-effect transistor (EGFET) for pH sensing. The prepared PSi has pore sizes in the range of 500 to 750 nm with a depth of approximately 42 µm. The results of testing PSi for hydrogen ion sensing in different pH buffer solutions reveal that the PSi has a sensitivity value of 66 mV/pH that is considered a super Nernstian value. The sensor considers stability to be in the pH range of 2 to 12. The hysteresis values of the prepared PSi sensor were approximately 8.2 and 10.5 mV in the low and high pH loop, respectively. The result of this study reveals a promising application of PSi in the field for detecting hydrogen ions in different solutions. View Full-Text
Keywords: macroporous materials; ionic conductivity; pH sensitivity macroporous materials; ionic conductivity; pH sensitivity
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Al-Hardan, N.H.; Abdul Hamid, M.A.; Ahmed, N.M.; Jalar, A.; Shamsudin, R.; Othman, N.K.; Kar Keng, L.; Chiu, W.; Al-Rawi, H.N. High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor. Sensors 2016, 16, 839.

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