The Design and Optimization of a Highly Sensitive and Overload-Resistant Piezoresistive Pressure Sensor
AbstractA piezoresistive pressure sensor with a beam-membrane-dual-island structure is developed for micro-pressure monitoring in the field of aviation, which requires great sensitivity and overload resistance capacity. The design, fabrication, and test of the sensor are presented in this paper. By analyzing the stress distribution of sensitive elements using the finite element method, a novel structure incorporating sensitive beams with a traditional bossed diaphragm is built up. The proposed structure proved to be advantageous in terms of high sensitivity and high overload resistance compared with the conventional bossed diaphragm and flat diaphragm structures. Curve fittings of surface stress and deflection based on ANSYS simulation results are performed to establish the sensor equations. Fabricated on an n-type single crystal silicon wafer, the sensor chips are wire-bonded to a printed circuit board (PCB) and packaged for experiments. The static and dynamic characteristics are tested and discussed. Experimental results show that the sensor has a sensitivity as high as 17.339 μV/V/Pa in the range of 500 Pa at room temperature, and a high overload resistance of 200 times overpressure. Due to the excellent performance, the sensor can be applied in measuring micro-pressure lower than 500 Pa. View Full-Text
Share & Cite This Article
Meng, X.; Zhao, Y. The Design and Optimization of a Highly Sensitive and Overload-Resistant Piezoresistive Pressure Sensor. Sensors 2016, 16, 348.
Meng X, Zhao Y. The Design and Optimization of a Highly Sensitive and Overload-Resistant Piezoresistive Pressure Sensor. Sensors. 2016; 16(3):348.Chicago/Turabian Style
Meng, Xiawei; Zhao, Yulong. 2016. "The Design and Optimization of a Highly Sensitive and Overload-Resistant Piezoresistive Pressure Sensor." Sensors 16, no. 3: 348.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.