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Sensors 2016, 16(3), 273; doi:10.3390/s16030273

Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

1
Georgia Tech Lorraine, Georgia Tech- Centre National de la Recherche Scientifique (CNRS), Unité Mixte Internationale (UMI 2958), 2-3 rue Marconi, Metz 57070, France
2
Peugeot Citroën PSA, 75 Avenue de la Grande Armée, Paris 75116, France
3
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA
4
Institute d’Electronique, de Microélectronique et de Nanotechnologie, Centre National de Recherche Scientifique (IEMN/CNRS) 8520, Université de Lille Science et technologies, Villeneuve d’Ascq 59652, France
5
Université de Lorraine, LMOPS EA 4423, 2 rue E. Belin, 57070 Metz, France
*
Author to whom correspondence should be addressed.
Academic Editor: Hans Peter Lang
Received: 31 December 2015 / Revised: 9 February 2016 / Accepted: 18 February 2016 / Published: 23 February 2016
(This article belongs to the Special Issue I3S 2015 Selected Papers)
View Full-Text   |   Download PDF [15158 KB, uploaded 23 February 2016]   |  

Abstract

We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO2 and 15 ppm-NH3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time. View Full-Text
Keywords: AlGaN/GaN heterostructure; HEMT transistor; NOx and NH3; automotive exhaust line; gas sensor AlGaN/GaN heterostructure; HEMT transistor; NOx and NH3; automotive exhaust line; gas sensor
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Halfaya, Y.; Bishop, C.; Soltani, A.; Sundaram, S.; Aubry, V.; Voss, P.L.; Salvestrini, J.-P.; Ougazzaden, A. Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems. Sensors 2016, 16, 273.

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