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Sensors 2016, 16(12), 2145; doi:10.3390/s16122145

The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors

Institute of Microelectronics & Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
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Author to whom correspondence should be addressed.
Academic Editors: Christos Riziotis, Evangelos Hristoforou and Dimitrios Vlachos
Received: 11 October 2016 / Revised: 8 December 2016 / Accepted: 12 December 2016 / Published: 15 December 2016
(This article belongs to the Special Issue Materials and Applications for Sensors and Transducers)
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Abstract

A metal–semiconductor–metal ultraviolet photodetector has been fabricated with a radiofrequency (RF)-sputtered InGaO thin film. Results for the devices fabricated under different oxygen partial pressure are here in discussed. Under low oxygen partial pressure, the devices work in the photoconductive mode because of the large number of subgap states. Therefore, the devices exhibit internal gain. These defects in the films result in slow switching times and lower photo/dark current ratios. A higher flow ratio of oxygen during the sputtering process can effectively restrain the oxygen vacancies in the film. The responsivity of the photodetector fabricated under an oxygen flow ratio of 20% can reach 0.31 A/W. The rise time and decay time can reach 21 s and 27 s, respectively. View Full-Text
Keywords: InGaO; photodetector; oxygen partial pressure InGaO; photodetector; oxygen partial pressure
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Chang, S.-P.; Chang, L.-Y.; Li, J.-Y. The Influence of Different Partial Pressure on the Fabrication of InGaO Ultraviolet Photodetectors. Sensors 2016, 16, 2145.

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