Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics
AbstractHydrogenated amorphous silicon (a-Si:H) shows interesting optoelectronic and technological properties that make it suitable for the fabrication of passive and active micro-photonic devices, compatible moreover with standard microelectronic devices on a microchip. A temperature sensor based on a hydrogenated amorphous silicon p-i-n diode integrated in an optical waveguide for silicon photonics applications is presented here. The linear dependence of the voltage drop across the forward-biased diode on temperature, in a range from 30 °C up to 170 °C, has been used for thermal sensing. A high sensitivity of 11.9 mV/°C in the bias current range of 34–40 nA has been measured. The proposed device is particularly suitable for the continuous temperature monitoring of CMOS-compatible photonic integrated circuits, where the behavior of the on-chip active and passive devices are strongly dependent on their operating temperature. View Full-Text
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Rao, S.; Pangallo, G.; Della Corte, F.G. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics. Sensors 2016, 16, 67.
Rao S, Pangallo G, Della Corte FG. Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics. Sensors. 2016; 16(1):67.Chicago/Turabian Style
Rao, Sandro; Pangallo, Giovanni; Della Corte, Francesco G. 2016. "Integrated Amorphous Silicon p-i-n Temperature Sensor for CMOS Photonics." Sensors 16, no. 1: 67.
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