Next Article in Journal
An Enhanced Error Model for EKF-Based Tightly-Coupled Integration of GPS and Land Vehicle’s Motion Sensors
Previous Article in Journal
Cell Selection Game for Densely-Deployed Sensor and Mobile Devices In 5G Networks Integrating Heterogeneous Cells and the Internet of Things
Article Menu

Export Article

Open AccessArticle
Sensors 2015, 15(9), 24257-24268; doi:10.3390/s150924257

A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging

1
State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China
2
University of Chinese Academy of Sciences, Beijing 100190, China
*
Authors to whom correspondence should be addressed.
Academic Editor: Vittorio M. N. Passaro
Received: 11 June 2015 / Revised: 31 July 2015 / Accepted: 10 August 2015 / Published: 21 September 2015
(This article belongs to the Section Physical Sensors)
View Full-Text   |   Download PDF [743 KB, uploaded 21 September 2015]   |  

Abstract

This paper presents the fabrication and characterization of a resonant pressure microsensor based on SOI-glass wafer-level vacuum packaging. The SOI-based pressure microsensor consists of a pressure-sensitive diaphragm at the handle layer and two lateral resonators (electrostatic excitation and capacitive detection) on the device layer as a differential setup. The resonators were vacuum packaged with a glass cap using anodic bonding and the wire interconnection was realized using a mask-free electrochemical etching approach by selectively patterning an Au film on highly topographic surfaces. The fabricated resonant pressure microsensor with dual resonators was characterized in a systematic manner, producing a quality factor higher than 10,000 (~6 months), a sensitivity of about 166 Hz/kPa and a reduced nonlinear error of 0.033% F.S. Based on the differential output, the sensitivity was increased to two times and the temperature-caused frequency drift was decreased to 25%. View Full-Text
Keywords: resonant pressure sensor; differential frequency output; vacuum packaging; anodic bonding; wire interconnection; mask-free metallization resonant pressure sensor; differential frequency output; vacuum packaging; anodic bonding; wire interconnection; mask-free metallization
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Xie, B.; Xing, Y.; Wang, Y.; Chen, J.; Chen, D.; Wang, J. A Lateral Differential Resonant Pressure Microsensor Based on SOI-Glass Wafer-Level Vacuum Packaging. Sensors 2015, 15, 24257-24268.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top