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Sensors 2015, 15(8), 20305-20315; doi:10.3390/s150820305

Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments

1
Center of Microperipheric Technologies, Fraunhofer Institute IZM, Berlin 13355, Germany
2
University of Applied Sciences, FB I, Microsystems Engineering, Berlin 12459, Germany
*
Author to whom correspondence should be addressed.
Academic Editor: Vittorio M. N. Passaro
Received: 19 May 2015 / Revised: 29 July 2015 / Accepted: 6 August 2015 / Published: 18 August 2015
(This article belongs to the Special Issue Sensors for Harsh Environments)
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Abstract

In this paper we present and discuss two innovative liquid-free SOI sensors for pressure measurements in harsh environments. The sensors are capable of measuring pressures at high temperatures. In both concepts media separation is realized using a steel membrane. The two concepts represent two different strategies for packaging of devices for use in harsh environments and at high temperatures. The first one is a “one-sensor-one-packaging_technology” concept. The second one uses a standard flip-chip bonding technique. The first sensor is a “floating-concept”, capable of measuring pressures at temperatures up to 400 °C (constant load) with an accuracy of 0.25% Full Scale Output (FSO). A push rod (mounted onto the steel membrane) transfers the applied pressure directly to the center-boss membrane of the SOI-chip, which is placed on a ceramic carrier. The chip membrane is realized by Deep Reactive Ion Etching (DRIE or Bosch Process). A novel propertied chip housing employing a sliding sensor chip that is fixed during packaging by mechanical preloading via the push rod is used, thereby avoiding chip movement, and ensuring optimal push rod load transmission. The second sensor can be used up to 350 °C. The SOI chips consists of a beam with an integrated centre-boss with was realized using KOH structuring and DRIE. The SOI chip is not “floating” but bonded by using flip-chip technology. The fabricated SOI sensor chip has a bridge resistance of 3250 Ω. The realized sensor chip has a sensitivity of 18 mV/µm measured using a bridge current of 1 mA. View Full-Text
Keywords: MEMS; SOI-based sensors; sensors for harsh environment; sensors for high temperature MEMS; SOI-based sensors; sensors for harsh environment; sensors for high temperature
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Ngo, H.-D.; Mukhopadhyay, B.; Ehrmann, O.; Lang, K.-D. Advanced Liquid-Free, Piezoresistive, SOI-Based Pressure Sensors for Measurements in Harsh Environments. Sensors 2015, 15, 20305-20315.

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