Next Article in Journal
Dynamic Reconfiguration of a RGBD Sensor Based on QoS and QoC Requirements in Distributed Systems
Previous Article in Journal
PEG Functionalization of Whispering Gallery Mode Optical Microresonator Biosensors to Minimize Non-Specific Adsorption during Targeted, Label-Free Sensing
Article Menu

Export Article

Open AccessArticle
Sensors 2015, 15(8), 18061-18079; doi:10.3390/s150818061

MOS-FET as a Current Sensor in Power Electronics Converters

1
Faculty of Electrical engineering and computer sciences, University of Maribor, Smetanova 17, SI-2000 Maribor, Slovenia
2
Piktronik, Cesta k Tamu 17, SI-2000 Maribor, Slovenia
*
Author to whom correspondence should be addressed.
Academic Editor: Vittorio M.N. Passaro
Received: 11 May 2015 / Revised: 22 June 2015 / Accepted: 15 July 2015 / Published: 24 July 2015
(This article belongs to the Section Physical Sensors)
View Full-Text   |   Download PDF [1352 KB, uploaded 24 July 2015]   |  

Abstract

This paper presents a current sensing principle appropriate for use in power electronics’ converters. This current measurement principle has been developed for metal oxide semiconductor field effect transistor (MOS-FET) and is based on UDS voltage measurement. In practice, shunt resistors and Hall effect sensors are usually used for these purposes, but the presented principle has many advantages. There is no need for additional circuit elements within high current paths, causing parasitic inductances and increased production complexity. The temperature dependence of MOS-FETs conductive resistance RDS−ON is considered in order to achieve the appropriate measurement accuracy. The “MOS-FET sensor” is also accompanied by a signal acquisition electronics circuit with an appropriate frequency bandwidth. The obtained analogue signal is therefore interposed to an A-D converter for further data acquisition. In order to achieve sufficient accuracy, a temperature compensation and appropriate approximation is used (RDS−ON = RDS−ON(Vj)). The MOS-FET sensor is calibrated according to a reference sensor based on the Hall-effect principle. The program algorithm is executed on 32-bit ARM M4 MCU, STM32F407. View Full-Text
Keywords: power electronics; converter; MOS-FET; current measurement; thermal model power electronics; converter; MOS-FET; current measurement; thermal model
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Pajer, R.; Milanoviĉ, M.; Premzel, B.; Rodiĉ, M. MOS-FET as a Current Sensor in Power Electronics Converters. Sensors 2015, 15, 18061-18079.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top