A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics
AbstractThis paper presents a fully integrated linear Hall sensor by means of 0.8 μm high voltage complementary metal-oxide semiconductor (CMOS) technology. This monolithic Hall sensor chip features a highly sensitive horizontal switched Hall plate and an efficient signal conditioner using dynamic offset cancellation technique. An improved cross-like Hall plate achieves high magnetic sensitivity and low offset. A new spinning current modulator stabilizes the quiescent output voltage and improves the reliability of the signal conditioner. The tested results show that at the 5 V supply voltage, the maximum Hall output voltage of the monolithic Hall sensor microsystem, is up to ±2.1 V and the linearity of Hall output voltage is higher than 99% in the magnetic flux density range from ±5 mT to ±175 mT. The output equivalent residual offset is 0.48 mT and the static power consumption is 20 mW. View Full-Text
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Huang, H.; Wang, D.; Xu, Y. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics. Sensors 2015, 15, 27359-27373.
Huang H, Wang D, Xu Y. A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics. Sensors. 2015; 15(10):27359-27373.Chicago/Turabian Style
Huang, Haiyun; Wang, Dejun; Xu, Yue. 2015. "A Monolithic CMOS Magnetic Hall Sensor with High Sensitivity and Linearity Characteristics." Sensors 15, no. 10: 27359-27373.