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Sensors 2014, 14(3), 3825-3832; doi:10.3390/s140303825

Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering

1
Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan
2
Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan
3
Department of Nuclear Medicine, Chi Mei Medical Center, Tainan 710, Taiwan
*
Authors to whom correspondence should be addressed.
Received: 11 December 2013 / Revised: 10 February 2014 / Accepted: 11 February 2014 / Published: 25 February 2014
(This article belongs to the Section Chemical Sensors)
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Abstract

In this article, we report an improvement in the pH sensitivity of low-temperature polycrystalline-silicon (poly-Si) thin-film transistor (TFT) sensors using an H2 sintering process. The low-temperature polycrystalline-silicon (LTPS) TFT sensor with H2 sintering exhibited a high sensitivity than that without H2 sintering. This result may be due to the resulting increase in the number of Si–OH2+ and Si–O bonds due to the incorporation of H in the gate oxide to reduce the dangling silicon bonds and hence create the surface active sites and the resulting increase in the number of chemical reactions at these surface active sites. Moreover, the LTPS TFT sensor device not only offers low cost and a simple fabrication processes, but the technique also can be extended to integrate the sensor into other systems.
Keywords: low-temperature polycrystalline-silicon (poly-Si); thin-film transistors (TFTs); H2 sintering; pH sensitivity low-temperature polycrystalline-silicon (poly-Si); thin-film transistors (TFTs); H2 sintering; pH sensitivity
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Yen, L.-C.; Tang, M.-T.; Chang, F.-Y.; Pan, T.-M.; Chao, T.-S.; Lee, C.-H. Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering. Sensors 2014, 14, 3825-3832.

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