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Sensors 2014, 14(2), 2350-2361; doi:10.3390/s140202350
Article

Influence of Conductivity and Dielectric Constant of Water–Dioxane Mixtures on the Electrical Response of SiNW-Based FETs

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Received: 26 September 2013 / Revised: 22 January 2014 / Accepted: 24 January 2014 / Published: 29 January 2014
(This article belongs to the Section Physical Sensors)
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Abstract

In this study, we report on the electrical response of top-down, p-type silicon nanowire field-effect transistors exposed to water and mixtures of water and dioxane. First, the capacitive coupling of the back gate and the liquid gate via an Ag/AgCl electrode were compared in water. It was found that for liquid gating smaller potentials are needed to obtain similar responses of the nanowire compared to back gating. In the case of back gating, the applied potential couples through the buried oxide layer, indicating that the associated capacitance dominates all other capacitances involved during this mode of operation. Next, the devices were exposed to mixtures of water and dioxane to study the effect of these mixtures on the device characteristics, including the threshold voltage (VT). The VT dependency on the mixture composition was found to be related to the decreased dissociation of the surface silanol groups and the conductivity of the mixture used. This latter was confirmed by experiments with constant conductivity and varying water–dioxane mixtures.
Keywords: silicon nanowire; field-effect transistor; liquid gate; back gate; conductivity silicon nanowire; field-effect transistor; liquid gate; back gate; conductivity
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Mescher, M.; Brinkman, A.G.; Bosma, D.; Klootwijk, J.H.; Sudhölter, E.J.; de Smet, L.C. Influence of Conductivity and Dielectric Constant of Water–Dioxane Mixtures on the Electrical Response of SiNW-Based FETs. Sensors 2014, 14, 2350-2361.

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