Next Article in Journal
Optimization of ERK Activity Biosensors for both Ratiometric and Lifetime FRET Measurements
Previous Article in Journal
Fusion of Optimized Indicators from Advanced Driver Assistance Systems (ADAS) for Driver Drowsiness Detection
Article Menu

Export Article

Open AccessArticle
Sensors 2014, 14(1), 1132-1139; doi:10.3390/s140101132

A Non-Intrusive Method for Monitoring the Degradation of MOSFETs

1,2,3,* , 1,2,3
,
1,2,3
,
1,2,3
and
1,2,3
1
College of Information Engineering, Capital Normal University, Beijing 100048, China
2
Beijing Engineering Research Center of High Reliable Embedded System, Capital Normal University, Beijing 100048, China
3
Beijing Key Laboratory of Electronic System Reliable Technology, Capital Normal University, Beijing 100048, China
*
Author to whom correspondence should be addressed.
Received: 26 November 2013 / Revised: 28 December 2013 / Accepted: 4 January 2014 / Published: 10 January 2014
(This article belongs to the Section Physical Sensors)
View Full-Text   |   Download PDF [404 KB, uploaded 21 June 2014]   |  

Abstract

Highly reliable embedded systems have been widely applied in the fields of aerospace, nuclear power, high-speed rail, etc., which are related to security and economic development. The reliability of the power supply directly influences the security of the embedded system, and has been the research focus of numerous electronic information and energy studies. The degradation of power modules occupies a dominant position among the key factors affecting the power supply reliability. How to dynamically determine the degradation state and forecast the remaining useful life of working power modules is critical. Therefore, an online non-intrusive method of obtaining the degradation state of MOSFETs based on the Volterra series is proposed. It uses the self-driving signal of MOSFETs as a non-intrusive incentive, and extracts the degradation characteristics of MOSFETs by the frequency-domain kernel of the Volterra series. Experimental results show that the identification achieved by the method agrees well with the theoretical analysis. View Full-Text
Keywords: non-intrusive; degradation; Volterra series; MOSFET non-intrusive; degradation; Volterra series; MOSFET
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Wu, L.-F.; Zheng, Y.; Guan, Y.; Wang, G.-H.; Li, X.-J. A Non-Intrusive Method for Monitoring the Degradation of MOSFETs. Sensors 2014, 14, 1132-1139.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top