Sensors 2013, 13(9), 12467-12481; doi:10.3390/s130912467
Article

NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors

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Received: 23 July 2013; in revised form: 27 August 2013 / Accepted: 11 September 2013 / Published: 17 September 2013
(This article belongs to the Section Physical Sensors)
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Abstract: Semiconductor-based gas sensors that use n-type WO3 or p-type Co3O4 powder were fabricated and their gas sensing properties toward NO2 or NO (0.5–5 ppm in air) were investigated at 100 °C or 200 °C. The resistance of the WO3-based sensor increased on exposure to NO2 and NO. On the other hand, the resistance of the Co3O4-based sensor varied depending on the operating temperature and the gas species. The chemical states of the surface of WO3 or those of the Co3O4 powder on exposure to 1 ppm NO2 and NO were investigated by diffuse reflectance infrared Fourier transform (DRIFT) spectroscopy. No clear differences between the chemical states of the metal oxide surface exposed to NO2 or NO could be detected from the DRIFT spectra.
Keywords: gas sensor; metal oxide semiconductor; diffuse reflectance infrared Fourier transform spectroscopy; NO2; NO
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MDPI and ACS Style

Akamatsu, T.; Itoh, T.; Izu, N.; Shin, W. NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors. Sensors 2013, 13, 12467-12481.

AMA Style

Akamatsu T, Itoh T, Izu N, Shin W. NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors. Sensors. 2013; 13(9):12467-12481.

Chicago/Turabian Style

Akamatsu, Takafumi; Itoh, Toshio; Izu, Noriya; Shin, Woosuck. 2013. "NO and NO2 Sensing Properties of WO3 and Co3O4 Based Gas Sensors." Sensors 13, no. 9: 12467-12481.


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