Sensors 2013, 13(3), 3664-3674; doi:10.3390/s130303664
Article

A Zirconium Dioxide Ammonia Microsensor Integrated with a Readout Circuit Manufactured Using the 0.18 μm CMOS Process

Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan
* Author to whom correspondence should be addressed.
Received: 19 December 2012; in revised form: 19 February 2013 / Accepted: 13 March 2013 / Published: 15 March 2013
(This article belongs to the Special Issue Gas Sensors - 2013)
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Abstract: The study presents an ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm complementary metal oxide semiconductor (CMOS) process. The integrated sensor chip consists of a heater, an ammonia sensor and a readout circuit. The ammonia sensor is constructed by a sensitive film and the interdigitated electrodes. The sensitive film is zirconium dioxide that is coated on the interdigitated electrodes. The heater is used to provide a working temperature to the sensitive film. A post-process is employed to remove the sacrificial layer and to coat zirconium dioxide on the sensor. When the sensitive film adsorbs or desorbs ammonia gas, the sensor produces a change in resistance. The readout circuit converts the resistance variation of the sensor into the output voltage. The experiments show that the integrated ammonia sensor has a sensitivity of 4.1 mV/ppm.
Keywords: integrtaed ammonia microsensor; zirconium dioxide; readout circuit; CMOS

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MDPI and ACS Style

Lin, G.-M.; Dai, C.-L.; Yang, M.-Z. A Zirconium Dioxide Ammonia Microsensor Integrated with a Readout Circuit Manufactured Using the 0.18 μm CMOS Process. Sensors 2013, 13, 3664-3674.

AMA Style

Lin G-M, Dai C-L, Yang M-Z. A Zirconium Dioxide Ammonia Microsensor Integrated with a Readout Circuit Manufactured Using the 0.18 μm CMOS Process. Sensors. 2013; 13(3):3664-3674.

Chicago/Turabian Style

Lin, Guan-Ming; Dai, Ching-Liang; Yang, Ming-Zhi. 2013. "A Zirconium Dioxide Ammonia Microsensor Integrated with a Readout Circuit Manufactured Using the 0.18 μm CMOS Process." Sensors 13, no. 3: 3664-3674.

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