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Improvement of H2S Sensing Properties of SnO2-Based Thick Film Gas Sensors Promoted with MoO3 and NiO
Department of Chemical Engineering, Kyungpook National University, Daegu 702-701, Korea
Centre for Research & Development, PRIST University, Puducherry 605 007, India
HKC, Sucho-gu, Seoul 130-070, Korea
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
These authors contributed equally to this work.
* Author to whom correspondence should be addressed.
Received: 29 January 2013; in revised form: 4 March 2013 / Accepted: 15 March 2013 / Published: 19 March 2013
Abstract: The effects of the SnO2 pore size and metal oxide promoters on the sensing properties of SnO2-based thick film gas sensors were investigated to improve the detection of very low H2S concentrations (<1 ppm). SnO2 sensors and SnO2-based thick-film gas sensors promoted with NiO, ZnO, MoO3, CuO or Fe2O3 were prepared, and their sensing properties were examined in a flow system. The SnO2 materials were prepared by calcining SnO2 at 600, 800, 1,000 and 1,200 °C to give materials identified as SnO2(600), SnO2(800), SnO2(1000), and SnO2(1200), respectively. The Sn(12)Mo5Ni3 sensor, which was prepared by physically mixing 5 wt% MoO3 (Mo5), 3 wt% NiO (Ni3) and SnO2(1200) with a large pore size of 312 nm, exhibited a high sensor response of approximately 75% for the detection of 1 ppm H2S at 350 °C with excellent recovery properties. Unlike the SnO2 sensors, its response was maintained during multiple cycles without deactivation. This was attributed to the promoter effect of MoO3. In particular, the Sn(12)Mo5Ni3 sensor developed in this study showed twice the response of the Sn(6)Mo5Ni3 sensor, which was prepared by SnO2(600) with the smaller pore size than SnO2(1200). The excellent sensor response and recovery properties of Sn(12)Mo5Ni3 are believed to be due to the combined promoter effects of MoO3 and NiO and the diffusion effect of H2S as a result of the large pore size of SnO2.
Keywords: sensor; SnO2; pore size; H2S; MoO3; NiO
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MDPI and ACS Style
Lee, S.C.; Kim, S.Y.; Hwang, B.W.; Jung, S.Y.; Ragupathy, D.; Son, I.S.; Lee, D.D.; Kim, J.C. Improvement of H2S Sensing Properties of SnO2-Based Thick Film Gas Sensors Promoted with MoO3 and NiO. Sensors 2013, 13, 3889-3901.
Lee SC, Kim SY, Hwang BW, Jung SY, Ragupathy D, Son IS, Lee DD, Kim JC. Improvement of H2S Sensing Properties of SnO2-Based Thick Film Gas Sensors Promoted with MoO3 and NiO. Sensors. 2013; 13(3):3889-3901.
Lee, Soo C.; Kim, Seong Y.; Hwang, Byung W.; Jung, Suk Y.; Ragupathy, Dhanusuraman; Son, In S.; Lee, Duk D.; Kim, Jae C. 2013. "Improvement of H2S Sensing Properties of SnO2-Based Thick Film Gas Sensors Promoted with MoO3 and NiO." Sensors 13, no. 3: 3889-3901.