Next Article in Journal
Detection of Micrococcus Luteus Biofilm Formation in Microfluidic Environments by pH Measurement Using an Ion-Sensitive Field-Effect Transistor
Next Article in Special Issue
Progress in Infrared Photodetectors Since 2000
Previous Article in Journal
Progress in the Development of CdZnTe Unipolar Detectors for Different Anode Geometries and Data Corrections
Sensors 2013, 13(2), 2475-2483; doi:10.3390/s130202475
Article

Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer

1,* , 2
, 3
, 3
, 3
, 3
 and 2
Received: 17 December 2012; in revised form: 6 February 2013 / Accepted: 8 February 2013 / Published: 18 February 2013
(This article belongs to the Special Issue Photodetectors)
View Full-Text   |   Download PDF [432 KB, uploaded 21 June 2014]   |   Browse Figures
Abstract: Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ~600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer from low responsivity due to low carrier mobility. Here we report electro-optic sampling time response measurements of a detector that employs an AlGaAs heterojunction, a thin layer of LT-GaAs, a channel of RT-GaAs, and a vertical electric field that together facilitate collection of optically generated electrons while suppressing collection of lower mobility holes. Consequently, these devices have detection efficiency near that of RT-GaAs yet provide pulse widths nearly an order of magnitude faster—~6 ps for a cathode-anode separation of 1.3 μm and ~12 ps for distances more than 3 μm.
Keywords: photodetector; photodiode; GaAs; low-temperature grown GaAs; electro-optic sampling; ultrafast detector; heterojunction; Schottky contact photodetector; photodiode; GaAs; low-temperature grown GaAs; electro-optic sampling; ultrafast detector; heterojunction; Schottky contact
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Export to BibTeX |
EndNote


MDPI and ACS Style

Currie, M.; Dianat, P.; Persano, A.; Martucci, M.C.; Quaranta, F.; Cola, A.; Nabet, B. Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer. Sensors 2013, 13, 2475-2483.

AMA Style

Currie M, Dianat P, Persano A, Martucci MC, Quaranta F, Cola A, Nabet B. Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer. Sensors. 2013; 13(2):2475-2483.

Chicago/Turabian Style

Currie, Marc; Dianat, Pouya; Persano, Anna; Martucci, Maria C.; Quaranta, Fabio; Cola, Adriano; Nabet, Bahram. 2013. "Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer." Sensors 13, no. 2: 2475-2483.


Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert