Sensors 2013, 13(2), 2475-2483; doi:10.3390/s130202475
Article

Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer

Received: 17 December 2012; in revised form: 6 February 2013 / Accepted: 8 February 2013 / Published: 18 February 2013
(This article belongs to the Special Issue Photodetectors)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ~600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer from low responsivity due to low carrier mobility. Here we report electro-optic sampling time response measurements of a detector that employs an AlGaAs heterojunction, a thin layer of LT-GaAs, a channel of RT-GaAs, and a vertical electric field that together facilitate collection of optically generated electrons while suppressing collection of lower mobility holes. Consequently, these devices have detection efficiency near that of RT-GaAs yet provide pulse widths nearly an order of magnitude faster—~6 ps for a cathode-anode separation of 1.3 μm and ~12 ps for distances more than 3 μm.
Keywords: photodetector; photodiode; GaAs; low-temperature grown GaAs; electro-optic sampling; ultrafast detector; heterojunction; Schottky contact
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MDPI and ACS Style

Currie, M.; Dianat, P.; Persano, A.; Martucci, M.C.; Quaranta, F.; Cola, A.; Nabet, B. Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer. Sensors 2013, 13, 2475-2483.

AMA Style

Currie M, Dianat P, Persano A, Martucci MC, Quaranta F, Cola A, Nabet B. Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer. Sensors. 2013; 13(2):2475-2483.

Chicago/Turabian Style

Currie, Marc; Dianat, Pouya; Persano, Anna; Martucci, Maria C.; Quaranta, Fabio; Cola, Adriano; Nabet, Bahram. 2013. "Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer." Sensors 13, no. 2: 2475-2483.

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