Abstract: Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ~600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications. However, LT-GaAs detectors usually suffer from low responsivity due to low carrier mobility. Here we report electro-optic sampling time response measurements of a detector that employs an AlGaAs heterojunction, a thin layer of LT-GaAs, a channel of RT-GaAs, and a vertical electric field that together facilitate collection of optically generated electrons while suppressing collection of lower mobility holes. Consequently, these devices have detection efficiency near that of RT-GaAs yet provide pulse widths nearly an order of magnitude faster—~6 ps for a cathode-anode separation of 1.3 μm and ~12 ps for distances more than 3 μm.
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Currie, M.; Dianat, P.; Persano, A.; Martucci, M.C.; Quaranta, F.; Cola, A.; Nabet, B. Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer. Sensors 2013, 13, 2475-2483.
Currie M, Dianat P, Persano A, Martucci MC, Quaranta F, Cola A, Nabet B. Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer. Sensors. 2013; 13(2):2475-2483.
Currie, Marc; Dianat, Pouya; Persano, Anna; Martucci, Maria C.; Quaranta, Fabio; Cola, Adriano; Nabet, Bahram. 2013. "Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer." Sensors 13, no. 2: 2475-2483.