Sensors 2013, 13(2), 2093-2112; doi:10.3390/s130202093
Article

Comparative Study on the Performance of Five Different Hall Effect Devices

Received: 12 December 2012; in revised form: 25 January 2013 / Accepted: 4 February 2013 / Published: 5 February 2013
(This article belongs to the Section Physical Sensors)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance.
Keywords: Hall Effect sensor design; offset; sensitivity; device polarization; 3D physical simulations
PDF Full-text Download PDF Full-Text [524 KB, uploaded 21 June 2014 06:04 CEST]

Export to BibTeX |
EndNote


MDPI and ACS Style

Paun, M.-A.; Sallese, J.-M.; Kayal, M. Comparative Study on the Performance of Five Different Hall Effect Devices. Sensors 2013, 13, 2093-2112.

AMA Style

Paun M-A, Sallese J-M, Kayal M. Comparative Study on the Performance of Five Different Hall Effect Devices. Sensors. 2013; 13(2):2093-2112.

Chicago/Turabian Style

Paun, Maria-Alexandra; Sallese, Jean-Michel; Kayal, Maher. 2013. "Comparative Study on the Performance of Five Different Hall Effect Devices." Sensors 13, no. 2: 2093-2112.

Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert