Sensors 2013, 13(2), 2093-2112; doi:10.3390/s130202093
Article

Comparative Study on the Performance of Five Different Hall Effect Devices

STI-IEL-Electronics Laboratory, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
* Author to whom correspondence should be addressed.
Received: 12 December 2012; in revised form: 25 January 2013 / Accepted: 4 February 2013 / Published: 5 February 2013
(This article belongs to the Section Physical Sensors)
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Abstract: Five different Hall Effect sensors were modeled and their performance evaluated using a three dimensional simulator. The physical structure of the implemented sensors reproduces a certain technological fabrication process. Hall voltage, absolute, current-related, voltage-related and power-related sensitivities were obtained for each sensor. The effect of artificial offset was also investigated for cross-like structures. The simulation procedure guides the designer in choosing the Hall cell optimum shape, dimensions and device polarization conditions that would allow the highest performance.
Keywords: Hall Effect sensor design; offset; sensitivity; device polarization; 3D physical simulations

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MDPI and ACS Style

Paun, M.-A.; Sallese, J.-M.; Kayal, M. Comparative Study on the Performance of Five Different Hall Effect Devices. Sensors 2013, 13, 2093-2112.

AMA Style

Paun M-A, Sallese J-M, Kayal M. Comparative Study on the Performance of Five Different Hall Effect Devices. Sensors. 2013; 13(2):2093-2112.

Chicago/Turabian Style

Paun, Maria-Alexandra; Sallese, Jean-Michel; Kayal, Maher. 2013. "Comparative Study on the Performance of Five Different Hall Effect Devices." Sensors 13, no. 2: 2093-2112.

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