Sensors 2013, 13(2), 1856-1871; doi:10.3390/s130201856
Article

A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI

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Received: 8 November 2012; in revised form: 27 December 2012 / Accepted: 8 January 2013 / Published: 31 January 2013
(This article belongs to the Special Issue State-of-the-Art Sensors Technology in Italy 2012)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: This paper deals with the monitoring of power transistor current subjected to radio-frequency interference. In particular, a new current sensor with no connection to the power transistor drain and with improved performance with respect to the existing current-sensing schemes is presented. The operation of the above mentioned current sensor is discussed referring to time-domain computer simulations. The susceptibility of the proposed circuit to radio-frequency interference is evaluated through time-domain computer simulations and the results are compared with those obtained for a conventional integrated current sensor.
Keywords: current sensor; CMOS integrated circuit; smart power; electromagnetic interference (EMI); electromagnetic compatibility (EMC); senseFET; miller effect
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MDPI and ACS Style

Aiello, O.; Fiori, F. A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI. Sensors 2013, 13, 1856-1871.

AMA Style

Aiello O, Fiori F. A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI. Sensors. 2013; 13(2):1856-1871.

Chicago/Turabian Style

Aiello, Orazio; Fiori, Franco. 2013. "A New Mirroring Circuit for Power MOS Current Sensing Highly Immune to EMI." Sensors 13, no. 2: 1856-1871.

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