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Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR)
Department of Solid State Electronics, Uppsala University, 751 21 Uppsala, Sweden
Department of Solid State Physics and Microelectronics, University of Sofia, 1164 Sofia, Bulgaria
Georgy Nadjakov Institute of Solid State Physics, 1784 Sofia, Bulgaria
* Author to whom correspondence should be addressed.
Received: 8 May 2011; in revised form: 8 June 2011 / Accepted: 28 June 2011 / Published: 4 July 2011
Abstract: The mass sensitivity of thin aluminum nitride (AlN) film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO)-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented.
Keywords: resonator; aluminum nitride; membrane; HMDSO; gravimetric; sensitivity
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Arapan, L.; Alexieva, G.; Avramov, I.D.; Radeva, E.; Strashilov, V.; Katardjiev, I.; Yantchev, V. Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR). Sensors 2011, 11, 6942-6953.
Arapan L, Alexieva G, Avramov ID, Radeva E, Strashilov V, Katardjiev I, Yantchev V. Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR). Sensors. 2011; 11(7):6942-6953.
Arapan, Lilia; Alexieva, Gergana; Avramov, Ivan D.; Radeva, Ekaterina; Strashilov, Vesseline; Katardjiev, Ilia; Yantchev, Ventsislav. 2011. "Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR)." Sensors 11, no. 7: 6942-6953.