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Sensors 2011, 11(7), 6942-6953; doi:10.3390/s110706942

Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR)

3, 3
1 Department of Solid State Electronics, Uppsala University, 751 21 Uppsala, Sweden 2 Department of Solid State Physics and Microelectronics, University of Sofia, 1164 Sofia, Bulgaria 3 Georgy Nadjakov Institute of Solid State Physics, 1784 Sofia, Bulgaria
* Author to whom correspondence should be addressed.
Received: 8 May 2011 / Revised: 8 June 2011 / Accepted: 28 June 2011 / Published: 4 July 2011
(This article belongs to the Special Issue Emerging Acoustic Wave-Based Sensors)
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The mass sensitivity of thin aluminum nitride (AlN) film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO)-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented.
Keywords: resonator; aluminum nitride; membrane; HMDSO; gravimetric; sensitivity resonator; aluminum nitride; membrane; HMDSO; gravimetric; sensitivity
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Arapan, L.; Alexieva, G.; Avramov, I.D.; Radeva, E.; Strashilov, V.; Katardjiev, I.; Yantchev, V. Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR). Sensors 2011, 11, 6942-6953.

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