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Sensors 2011, 11(6), 6197-6202; doi:10.3390/s110606197
Article

A Standard CMOS Humidity Sensor without Post-Processing

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Received: 20 April 2011; in revised form: 1 June 2011 / Accepted: 3 June 2011 / Published: 8 June 2011
(This article belongs to the Section Physical Sensors)
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Abstract: A 2 µW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.
Keywords: capacitive sensors; microsensors; humidity measurement; CMOS integrated circuits capacitive sensors; microsensors; humidity measurement; CMOS integrated circuits
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Nizhnik, O.; Higuchi, K.; Maenaka, K. A Standard CMOS Humidity Sensor without Post-Processing. Sensors 2011, 11, 6197-6202.

AMA Style

Nizhnik O, Higuchi K, Maenaka K. A Standard CMOS Humidity Sensor without Post-Processing. Sensors. 2011; 11(6):6197-6202.

Chicago/Turabian Style

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke. 2011. "A Standard CMOS Humidity Sensor without Post-Processing." Sensors 11, no. 6: 6197-6202.



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