This article is
- freely available
A Standard CMOS Humidity Sensor without Post-Processing
Maenaka Human-sensing Fusion Project, 8111, Shosha 2167, Himeji-shi, 671-2280 Hyogo-ken, Japan
* Author to whom correspondence should be addressed.
Received: 20 April 2011; in revised form: 1 June 2011 / Accepted: 3 June 2011 / Published: 8 June 2011
Abstract: A 2 µW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.
Keywords: capacitive sensors; microsensors; humidity measurement; CMOS integrated circuits
Article StatisticsClick here to load and display the download statistics.
Notes: Multiple requests from the same IP address are counted as one view.
Cite This Article
MDPI and ACS Style
Nizhnik, O.; Higuchi, K.; Maenaka, K. A Standard CMOS Humidity Sensor without Post-Processing. Sensors 2011, 11, 6197-6202.
Nizhnik O, Higuchi K, Maenaka K. A Standard CMOS Humidity Sensor without Post-Processing. Sensors. 2011; 11(6):6197-6202.
Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke. 2011. "A Standard CMOS Humidity Sensor without Post-Processing." Sensors 11, no. 6: 6197-6202.