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Sensors 2011, 11(6), 6197-6202; doi:10.3390/s110606197

A Standard CMOS Humidity Sensor without Post-Processing

Maenaka Human-sensing Fusion Project, 8111, Shosha 2167, Himeji-shi, 671-2280 Hyogo-ken, Japan
Author to whom correspondence should be addressed.
Received: 20 April 2011 / Revised: 1 June 2011 / Accepted: 3 June 2011 / Published: 8 June 2011
(This article belongs to the Section Physical Sensors)
View Full-Text   |   Download PDF [1649 KB, 21 June 2014; original version 21 June 2014]   |  


A 2 µW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage converter. View Full-Text
Keywords: capacitive sensors; microsensors; humidity measurement; CMOS integrated circuits capacitive sensors; microsensors; humidity measurement; CMOS integrated circuits
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Nizhnik, O.; Higuchi, K.; Maenaka, K. A Standard CMOS Humidity Sensor without Post-Processing. Sensors 2011, 11, 6197-6202.

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