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Sensors 2010, 10(5), 4643-4654; doi:10.3390/s100504643
Article
A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors
Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu 30050, Taiwan
* Author to whom correspondence should be addressed.
Received: 10 March 2010; in revised form: 15 April 2010 / Accepted: 28 April 2010 / Published: 5 May 2010
(This article belongs to the Section Chemical Sensors)
Download PDF Full-Text [370 KB, uploaded 5 May 2010 11:52 CEST]
Abstract: A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect Transistors (ISFETs) to improve pH-dependent drift was demonstrated. Through the sequential measurements for both the n-channel and p-channel ISFETs, 75–100% pH-dependent drift could be successfully suppressed for the first seven hours. As a result, a nearly constant drift rate versus pH value was obtained, which increases the accuracy of pH measurements. Meanwhile, the drawback of the hyperbolic-like change with time of the common drift behavior for ISFETs was improved. A state-of-the-art integrated scheme adopting this method was also illustrated.
Keywords: drift; ISFET; pH-dependent; ZrO2
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MDPI and ACS Style
Chang, K.-M.; Chang, C.-T.; Chao, K.-Y.; Lin, C.-H. A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors. Sensors 2010, 10, 4643-4654.
AMA StyleChang K-M, Chang C-T, Chao K-Y, Lin C-H. A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors. Sensors. 2010; 10(5):4643-4654.
Chicago/Turabian StyleChang, Kow-Ming; Chang, Chih-Tien; Chao, Kuo-Yi; Lin, Chia-Hung. 2010. "A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors." Sensors 10, no. 5: 4643-4654.