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Sensors 2010, 10(5), 4643-4654; doi:10.3390/s100504643
Article

A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors

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Received: 10 March 2010; in revised form: 15 April 2010 / Accepted: 28 April 2010 / Published: 5 May 2010
(This article belongs to the Section Physical Sensors)
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Abstract: A novel compensation method for Zirconium dioxide gated Ion Sensitive Field Effect Transistors (ISFETs) to improve pH-dependent drift was demonstrated. Through the sequential measurements for both the n-channel and p-channel ISFETs, 75–100% pH-dependent drift could be successfully suppressed for the first seven hours. As a result, a nearly constant drift rate versus pH value was obtained, which increases the accuracy of pH measurements. Meanwhile, the drawback of the hyperbolic-like change with time of the common drift behavior for ISFETs was improved. A state-of-the-art integrated scheme adopting this method was also illustrated.
Keywords: drift; ISFET; pH-dependent; ZrO2 drift; ISFET; pH-dependent; ZrO2
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Chang, K.-M.; Chang, C.-T.; Chao, K.-Y.; Lin, C.-H. A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors. Sensors 2010, 10, 4643-4654.

AMA Style

Chang K-M, Chang C-T, Chao K-Y, Lin C-H. A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors. Sensors. 2010; 10(5):4643-4654.

Chicago/Turabian Style

Chang, Kow-Ming; Chang, Chih-Tien; Chao, Kuo-Yi; Lin, Chia-Hung. 2010. "A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors." Sensors 10, no. 5: 4643-4654.


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