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Entropy 2017, 19(1), 36; doi:10.3390/e19010036

Exploitation of the Maximum Entropy Principle in Mathematical Modeling of Charge Transport in Semiconductors

Dipartimento di Matematica ed Informatica, Università della Calabria e INFN-Gruppo c. Cosenza, Rende 87036, Italy
Dipartimento di Matematica ed Informatica, Università di Catania, Catania 95125, Italy
These authors contributed equally to this work.
Author to whom correspondence should be addressed.
Academic Editor: Kevin H. Knuth
Received: 7 November 2016 / Revised: 4 January 2017 / Accepted: 5 January 2017 / Published: 18 January 2017
(This article belongs to the Special Issue Maximum Entropy Principle and Semiconductors)


In the last two decades, the Maximum Entropy Principle (MEP) has been successfully employed to construct macroscopic models able to describe the charge and heat transport in semiconductor devices. These models are obtained, starting from the Boltzmann transport equations, for the charge and the phonon distribution functions, by taking—as macroscopic variables—suitable moments of the distributions and exploiting MEP in order to close the evolution equations for the chosen moments. Important results have also been obtained for the description of charge transport in devices made both of elemental and compound semiconductors, in cases where charge confinement is present and the carrier flow is two- or one-dimensional. View Full-Text
Keywords: Maximum Entropy Principle; charge transport; semiconductors Maximum Entropy Principle; charge transport; semiconductors

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Mascali, G.; Romano, V. Exploitation of the Maximum Entropy Principle in Mathematical Modeling of Charge Transport in Semiconductors. Entropy 2017, 19, 36.

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