Next Article in Journal
Chemical Reactions Using a Non-Equilibrium Wigner Function Approach
Next Article in Special Issue
Exploitation of the Maximum Entropy Principle in Mathematical Modeling of Charge Transport in Semiconductors
Previous Article in Journal
From Tools in Symplectic and Poisson Geometry to J.-M. Souriau’s Theories of Statistical Mechanics and Thermodynamics
Previous Article in Special Issue
Maximum Entropy Closure of Balance Equations for Miniband Semiconductor Superlattices
Article Menu
Issue 10 (October) cover image

Export Article

Open AccessArticle
Entropy 2016, 18(10), 368; doi:10.3390/e18100368

A Hydrodynamic Model for Silicon Nanowires Based on the Maximum Entropy Principle

Dipartimento di Matematica e Informatica, Università di Catania, Catania 95125, Italy
These authors contributed equally to this work.
*
Author to whom correspondence should be addressed.
Academic Editors: Vittorio Romano, Giovanni Mascali and Kevin H. Knuth
Received: 14 July 2016 / Revised: 6 September 2016 / Accepted: 30 September 2016 / Published: 19 October 2016
(This article belongs to the Special Issue Maximum Entropy Principle and Semiconductors)
View Full-Text   |   Download PDF [566 KB, uploaded 19 October 2016]   |  

Abstract

Silicon nanowires (SiNW) are quasi-one-dimensional structures in which the electrons are spatially confined in two directions, and they are free to move along the axis of the wire. The spatial confinement is governed by the Schrödinger–Poisson system, which must be coupled to the transport in the free motion direction. For devices with the characteristic length of a few tens of nanometers, the transport of the electrons along the axis of the wire can be considered semiclassical, and it can be dealt with by the multi-sub-band Boltzmann transport equations (MBTE). By taking the moments of the MBTE, a hydrodynamic model has been formulated, where explicit closure relations for the fluxes and production terms (i.e., the moments on the collisional operator) are obtained by means of the maximum entropy principle of extended thermodynamics, including the scattering of electrons with phonons, impurities and surface roughness scattering. Numerical results are shown for a SiNW transistor. View Full-Text
Keywords: silicon; nanowire; hydrodynamic; maximum entropy principle silicon; nanowire; hydrodynamic; maximum entropy principle
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Muscato, O.; Castiglione, T. A Hydrodynamic Model for Silicon Nanowires Based on the Maximum Entropy Principle. Entropy 2016, 18, 368.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Entropy EISSN 1099-4300 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top