Reprint

Crystal Dislocations: Their Impact on Physical Properties of Crystals

Edited by
December 2018
316 pages
  • ISBN978-3-03897-465-9 (Paperback)
  • ISBN978-3-03897-466-6 (PDF)

This book is a reprint of the Special Issue Crystal Dislocations: Their Impact on Physical Properties of Crystals that was published in

Chemistry & Materials Science
Engineering
Environmental & Earth Sciences
Summary

The proposed existence of the edge and screw dislocation in the 1930s, and the subsequent work showing that dislocation theory could explain the plastic deformation of crystals, represent an important step in developing our understanding of materials into a science. The continued work involved with characterization of dislocations and linking them to a variety of physical properties in both single and poly crystals have made enormous progress over the past 50 years. It is rare to find a technical application involving a material with any crystal structure that is not impacted by dislocations; mechanical properties, massive phase transformations, interphases, crystal growth, electronic properties, the list goes on. In many systems the properties is controlled by the formation of partial dislocations separated by a stacking fault; for example plastic deformation via deformation twinning. And finally, giant strides have been made in characterization and modeling of systems containing dislocations.

 

The Special Issue on “Crystal Dislocations” is intended to provide a unique international forum aimed at covering a broad range of results involving dislocations and their importance on crystal properties and crystal growth. Scientists working in a wide range of disciplines are invited to contribute to this cause.

 

Dr. K. Peter D. Lagerlof, Associate Professor of Ceramics

Guest Editor

Format
  • Paperback
License
© 2019 by the authors; CC BY-NC-ND license
Keywords
hydrogen storage alloy; phase transition; La hydride compound; hydriding kinetic; flow stress; morphology; Ni-based superalloys; homogenization; crystal plasticity; strontium titanate (STO); dislocations; transmission electron microscopy (TEM); single crystals; oxides; high pressure torsion (HPT); crystal plasticity; anisotropic; crystallographic orientation; slip trace; lattice rotation; stacking faults; frank partial dislocation; precipitates; vacancies; interface effects; screw dislocation; image method; Peierls–Nabarro model; ultrasonic oscillatory stress; strain-rate sensitivity of flow stress; activation energy for dislocation motion; forest dislocation density; heat treatment; nanoparticle; compression; anisotropy; dislocation; zinc oxides (ZnO); wurtzite structure; line defects; low-angle grain boundaries; scanning transmission electron microscopy (STEM); generalized stacking fault (GSF) energy; alumina; sapphire; dislocations; low-angle grain boundaries; stacking faults; transmission electron microscopy; diffraction peak profile analysis (DPPA); contrast factor; dislocations; twinning; crystal plasticity; planar faults; powder diffraction; MgO; dislocations; mechanical properties; nano-mechanics; multi-scale modeling; extreme conditions; dislocations; TiO2; SrTiO3; STEM; EELS; ChemiSTEM; SPM; etch pits; electrical properties; mechanical properties; resistive switching; heteroepitaxy; defects; semiconductors; elasticity; plasma-enhanced chemical vapour deposition; n/a