Next Article in Journal
Solid-Contact Reference Electrode for Ion-Selective Sensors
Previous Article in Journal
Multimodal Neuroimaging Microtool for Infrared Optical Stimulation, Thermal Measurements and Recording of Neuronal Activity in the Deep Tissue
Article Menu
Issue 4 (September) cover image

Article Versions

Export Article

Open AccessProceedings
Proceedings 2017, 1(4), 525; doi:10.3390/proceedings1040525

Influence of Buffers and Culture Media on Diamond Solution-Gated Field Effect Transistors Regarding Stability and Memory Effect

1
Institute of Physics, Czech Academy of Sciences v.v.i., 162 00 Prague, Czech Republic
2
Faculty of Electrical Engineering, Czech Technical University in Prague, 166 27 Prague, Czech Republic
3
Faculty of Civil Engineering, Czech Technical University in Prague, 166 29 Prague, Czech Republic
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
*
Author to whom correspondence should be addressed.
Published: 25 August 2017
Download PDF [855 KB, uploaded 26 August 2017]

Abstract

The transfer characteristics of a nanocrystalline diamond (NCD)-based solution-gated field effect transistor (SGFET) under the influence of inorganic and organic compounds were studied. Studied compounds included three different buffer solutions (Phosphate, HEPES, McIlvaine buffer) and commonly used culture media (fibronectin, albumin and fetal bovine serum). It was found that buffers with the same pH of 7.4 caused different voltage shifts in transfer characteristics. This effect was reversible which indicates the surface stability of the hydrogen-terminated diamond during repeated measurements. In contrast to this observation, the SGFET sensitivity decreased after applying the culture solutions which we attribute to the permanently adsorbed bio-layer formed on the SGFET channel sensing area.
Keywords: nanocrystalline diamond; field-effect transistor; transfer characteristics nanocrystalline diamond; field-effect transistor; transfer characteristics
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Procházka, V.; Ižák, T.; Kromka, A. Influence of Buffers and Culture Media on Diamond Solution-Gated Field Effect Transistors Regarding Stability and Memory Effect. Proceedings 2017, 1, 525.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Proceedings EISSN 2504-3900 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top