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Proceedings 2017, 1(4), 419; doi:10.3390/proceedings1040419

Development of All-Around SiO2/Al2O3 Gate, Suspended Silicon Nanowire Chemical Field Effect Transistors Si-nw-ChemFET

Laboratory for Analysis and Architecture of Systems (LAAS-CNRS), Université de Toulouse, F-31400 Toulouse, France
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
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Published: 8 August 2017
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Abstract

We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N+/P/N+ nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-based microfluidic channels. The Si-nw-MOSFET/ChemFET fabrication process and electrical/electrochemical characterizations are presented. The fabrication process did not need an expensive and time-consuming e-beam lithography, but only fast and “low cost” standard photolithography protocols. Such microdevice will provide new opportunities for bio-chemical analysis at the micro/nanoscale.
Keywords: ChemFET; finFET; MOSFET; ISFET; silicon nanowire; biosensor; potentiometric sensor; nanosensor; microsensor; pH measurement; microfluidics; gate all-around ChemFET; finFET; MOSFET; ISFET; silicon nanowire; biosensor; potentiometric sensor; nanosensor; microsensor; pH measurement; microfluidics; gate all-around
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Lale, A.; Grappin, A.; Mazenq, L.; Bourrier, D.; Lecestre, A.; Launay, J.; Temple-Boyer, P. Development of All-Around SiO2/Al2O3 Gate, Suspended Silicon Nanowire Chemical Field Effect Transistors Si-nw-ChemFET. Proceedings 2017, 1, 419.

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