A Combined Temperature and Stress Sensor in 0.18 μm CMOS Technology†
AbstractThis paper presents a solution for on-chip temperature and mechanical stress measurement in CMOS integrated circuits. Thereby both temperature and stress sensors are realized as resistive Wheatstone bridges. By design, both sensors show outputs affected by non-linearities and parasitic cross-sensitivities. The novelty presented in this work is to combine both non-ideal sensor outputs by applying a two-dimensional Newton-Raphson method to extract the actual values of temperature and mechanical stress which were obtained with errors of less than 0.5 K and 0.5 MPa.
Scifeed alert for new publicationsNever miss any articles matching your research from any publisher
- Get alerts for new papers matching your research
- Find out the new papers from selected authors
- Updated daily for 49'000+ journals and 6000+ publishers
- Define your Scifeed now
Huber, S.; François, S.; Paul, O. A Combined Temperature and Stress Sensor in 0.18 μm CMOS Technology. Proceedings 2017, 1, 340.
Huber S, François S, Paul O. A Combined Temperature and Stress Sensor in 0.18 μm CMOS Technology. Proceedings. 2017; 1(4):340.Chicago/Turabian Style
Huber, Samuel; François, Samuel; Paul, Oliver. 2017. "A Combined Temperature and Stress Sensor in 0.18 μm CMOS Technology." Proceedings 1, no. 4: 340.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.