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Proceedings 2017, 1(4), 354; doi:10.3390/proceedings1040354

High Gauge Factor Piezoresistors Using Aluminium Induced Crystallisation of Silicon at Low Thermal Budget

School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney 2052, Australia
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
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Published: 5 September 2017
(This article belongs to the Proceedings of Eurosensors 2017)
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Abstract

This paper reports on polysilicon piezo-resistors that are fabricated at a low thermal budget using aluminium-induced-crystallization (AIC) of ultra-high-vacuum e-beam evaporated silicon films. By in-situ phosphorus doping of precursor amorphous silicon films e-beam evaporated at room temperature on aluminium layer, we are able to increase and control the gauge factor of the polysilicon films formed by AIC at 450 °C. Piezo-resistors made from the polysilicon films are integrated on microcantilever beams to measure their gauge factors. Gauge factors as high as 62 is obtained for 2 × 1018/cm3 phosphorus doping level in the precursor amorphous silicon film. The measured gauge factors are significantly higher than previously reported values for polysilicon films.
Keywords: AIC polysilicon; piezo-resistor; low thermal budget; gauge factor AIC polysilicon; piezo-resistor; low thermal budget; gauge factor
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Chuang, I.; Michael, A.; Kwok, C.Y. High Gauge Factor Piezoresistors Using Aluminium Induced Crystallisation of Silicon at Low Thermal Budget. Proceedings 2017, 1, 354.

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