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Proceedings 2017, 1(4), 344; doi:10.3390/proceedings1040344

CMOS Technology Integrated Terahertz Rectifier

1
LFoundry, Avezzano, Italy
2
Rome University La Sapienza, Rome, Italy
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
*
Author to whom correspondence should be addressed.
Published: 22 August 2017
(This article belongs to the Proceedings of Eurosensors 2017)
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Abstract

We present new developments of CMOS compatible direct conversion terahertz detector operating at room temperature. The rectenna consists of an integrated antenna, realized on the surface of the integrated circuit and connected to a nanometric metallic whisker at one of its edges. The rectifying device can be obtained introducing just minor modifications of the charge storage well in conventional CMOS active pixel image sensor devices, making the proposed solution easy to integrate with existing imaging systems. In the paper we present technological developments of the rectifier structure, realized with minor changes from a standard 0.15 µm technology node. We also present the study of a patch antenna which can be directly integrated on the chip.
Keywords: terahertz; rectification; CMOS; antennas terahertz; rectification; CMOS; antennas
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Rao, R.; Amicis, G.D.; Monte, A.D.; Palma, F. CMOS Technology Integrated Terahertz Rectifier. Proceedings 2017, 1, 344.

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