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Proceedings 2017, 1(4), 341; doi:10.3390/proceedings1040341

Harsh Environmental Surface Acoustic Wave Temperature Sensor Based on Pure and Scandium doped Aluminum Nitride on Sapphire

Institute of Sensor and Actuator Systems, TU Wien, 1040 Vienna, Austria
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
Author to whom correspondence should be addressed.
Published: 17 August 2017
(This article belongs to the Proceedings of Eurosensors 2017)
Download PDF [334 KB, uploaded 13 October 2017]


This paper investigates the performance of surface acoustic wave (SAW) devices as low power MEMS temperature sensors using reactive sputter deposited aluminum nitride (AlN) and scandium doped aluminum nitride (AlScN) as piezoelectric layers on sapphire substrates. In detail, devices with a wavelength of 16 μm are fabricated with both AlN and AlScN films having a resonance frequency at room temperature of ~354 MHz and ~349 MHz, respectively. The samples are placed in a furnace and measured in argon atmosphere up to 800 °C. The temperature dependency on the frequency shows for both materials a linear decrease up to the maximum measured temperature level resulting in constant temperature coefficients of −27.62 kHz/°C and −27.81 kHz/°C, respectively.
Keywords: AlN; AlScN; SAW; harsh environmental; high temperature AlN; AlScN; SAW; harsh environmental; high temperature
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Gillinger, M.; Knobloch, T.; Schneider, M.; Schmid, U. Harsh Environmental Surface Acoustic Wave Temperature Sensor Based on Pure and Scandium doped Aluminum Nitride on Sapphire. Proceedings 2017, 1, 341.

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