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Proceedings 2017, 1(4), 291; doi:10.3390/proceedings1040291

Single-Step CMOS Compatible Fabrication of High Aspect Ratio Microchannels Embedded in Silicon

1
Department of Microfabrication, Group: ECTM, TU Delft, Delft, The Netherlands
2
Philips Healthcare, Best, The Netherlands
3
Holst Centre, Eindhoven, The Netherlands
4
Department of Mechanical Engineering, TU Eindhoven, Eindhoven, The Netherlands
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
*
Author to whom correspondence should be addressed.
Published: 11 August 2017
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Abstract

This paper presents a new method for the CMOS compatible fabrication of microchannels integrated into a silicon substrate. In a single-step DRIE process (Deep Reactive Ion Etching) a network of microchannels with High Aspect Ratio (HAR) up to 10, can be etched in a silicon substrate through a mesh mask. In the same single etching step, multidimensional microchannels with various dimensions (width, length, and depth) can be obtained by tuning the process and design parameters. These fully embedded structures enable further wafer processing and integration of electronic components like sensors and actuators in wafers with microchannels.
Keywords: embedded microchannel; HAR; mesh mask; single-step DRIE (Bosch process) embedded microchannel; HAR; mesh mask; single-step DRIE (Bosch process)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Kluba, M.; Arslan, A.; Stoute, R.; Muganda, J.; Dekker, R. Single-Step CMOS Compatible Fabrication of High Aspect Ratio Microchannels Embedded in Silicon. Proceedings 2017, 1, 291.

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