Performance of TAHOS Device as Nonvolatile TID Radiation Sensor†
AbstractThe titanium nitride–aluminum oxide–hafnium oxide–silicon oxide–silicon device using aluminum oxide as charge-blocking layer (hereafter TAHOS) could be a candidate for nonvolatile total ionization dose (TID) radiation sensor. In this paper, gamma radiation induces a significant decrease in the threshold voltage VT of TAHOS and the radiation-induced VT decrease on TAHOS is nearly 1.3 times of that on a standard titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon device (hereafter TOHOS) device after 5 Mrad TID gamma irradiation. The change in VT of TAHOS after gamma irradiation also has a strong correlation to TID up to 5 Mrad gamma irradiation. Moreover, the VT 10yrs retention characteristic of TAHOS device can be markedly improved and is nearly 13% better than that of a standard TOHOS device after 5 Mrad gamma irradiation. Therefore, the TAHOS device in this study has demonstrated the possibility using TAHOS for high TID response and good TID data retention for non-volatile TID radiation sensing.
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Jong, F.-C.; Hsieh, W.-C. Performance of TAHOS Device as Nonvolatile TID Radiation Sensor. Proceedings 2017, 1, 8.
Jong F-C, Hsieh W-C. Performance of TAHOS Device as Nonvolatile TID Radiation Sensor. Proceedings. 2017; 1(2):8.Chicago/Turabian Style
Jong, Fuh-Cheng; Hsieh, Wen-Ching. 2017. "Performance of TAHOS Device as Nonvolatile TID Radiation Sensor." Proceedings 1, no. 2: 8.
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