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Photonics 2016, 3(3), 46; doi:10.3390/photonics3030046

Ar+-Implanted Si-Waveguide Photodiodes for Mid-Infrared Detection

1
Photonics Research Center, United States Military Academy, West Point, NY 10996, USA
2
Department of Electrical Engineering, Columbia University, 500 W. 120th Street, New York, NY 10027, USA
3
Center for Functional Nanomaterials, Brookhaven National Laboratory, PO Box 5000, Upton, NY 11973, USA
4
College of Nanoscale Science and Engineering, SUNYPOLY, Albany, NY 12203, USA
5
Department of Electrical and Systems Engineering, University of Pennsylvania, 200 S. 33rd Street, Philadelphia, PA 19104, USA
6
IBM T. J. Watson Research Center, 1101 Kitchawan Rd., Yorktown Heights, NY 10598, USA
7
Microelectronics Sciences Laboratories, Columbia University, 500 W. 120th Street, New York, NY 10027, USA
*
Author to whom correspondence should be addressed.
Received: 30 June 2016 / Revised: 18 July 2016 / Accepted: 22 July 2016 / Published: 27 July 2016
(This article belongs to the Special Issue Advanced Photodetectors Devices and Technologies)
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Abstract

Complementary metal-oxide-semiconductor (CMOS)-compatible Ar+-implanted Si-waveguide p-i-n photodetectors operating in the mid-infrared (2.2 to 2.3 µm wavelengths) are demonstrated at room temperature. Responsivities exceeding 21 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 3.1%–3.7%. The dark current is found to vary from a few nanoamps down to less than 11 pA after post-implantation annealing at 350 °C. Linearity is demonstrated over four orders of magnitude, confirming a single-photon absorption process. The devices demonstrate a higher thermal processing budget than similar Si+-implanted devices and achieve higher responsivity after annealing up to 350 °C. View Full-Text
Keywords: silicon; photodetectors; integrated optics devices silicon; photodetectors; integrated optics devices
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Souhan, B.; Chen, C.P.; Lu, M.; Stein, A.; Bakhru, H.; Grote, R.R.; Bergman, K.; Green, W.M.J.; Osgood, R.M. Ar+-Implanted Si-Waveguide Photodiodes for Mid-Infrared Detection. Photonics 2016, 3, 46.

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