Next Article in Journal
Fabrication of 3D Photonic Crystals toward Arbitrary Manipulation of Photons in Three Dimensions
Next Article in Special Issue
Quantum Transport Simulation of High-Power 4.6-μm Quantum Cascade Lasers
Previous Article in Journal / Special Issue
Rapid and Sensitive Quantification of Isotopic Mixtures Using a Rapidly-Swept External Cavity Quantum Cascade Laser
Article Menu

Export Article

Open AccessArticle
Photonics 2016, 3(2), 35; doi:10.3390/photonics3020035

Heterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon

1
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
2
Code 5613, Naval Research Laboratory, Washington, DC 20375, USA
3
Department of Electrical and Computer Engineering, University of Wisconsin, Madison, WI 53706, USA
*
Author to whom correspondence should be addressed.
Received: 28 April 2016 / Revised: 29 May 2016 / Accepted: 30 May 2016 / Published: 2 June 2016
(This article belongs to the Special Issue Quantum Cascade Lasers - Advances and New Applications)
View Full-Text   |   Download PDF [4476 KB, uploaded 2 June 2016]   |  

Abstract

Silicon integration of mid-infrared (MIR) photonic devices promises to enable low-cost, compact sensing and detection capabilities that are compatible with existing silicon photonic and silicon electronic technologies. Heterogeneous integration by bonding III-V wafers to silicon waveguides has been employed previously to build integrated diode lasers for wavelengths from 1310 to 2010 nm. Recently, Fabry-Pérot Quantum Cascade Lasers integrated on silicon provided a 4800 nm light source for mid-infrared (MIR) silicon photonic applications. Distributed feedback (DFB) lasers are appealing for many high-sensitivity chemical spectroscopic sensing applications that require a single frequency, narrow-linewidth MIR source. While heterogeneously integrated 1550 nm DFB lasers have been demonstrated by introducing a shallow surface grating on a silicon waveguide within the active region, no mid-infrared DFB laser on silicon has been reported to date. Here we demonstrate quantum cascade DFB lasers heterogeneously integrated with silicon-on-nitride-on-insulator (SONOI) waveguides. These lasers emit over 200 mW of pulsed power at room temperature and operate up to 100 °C. Although the output is not single mode, the DFB grating nonetheless imposes wavelength selectivity with 22 nm of thermal tuning. View Full-Text
Keywords: quantum cascade laser; silicon photonics; distributed feedback laser; mid-infrared quantum cascade laser; silicon photonics; distributed feedback laser; mid-infrared
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Spott, A.; Peters, J.; Davenport, M.L.; Stanton, E.J.; Zhang, C.; Merritt, C.D.; Bewley, W.W.; Vurgaftman, I.; Kim, C.S.; Meyer, J.R.; Kirch, J.; Mawst, L.J.; Botez, D.; Bowers, J.E. Heterogeneously Integrated Distributed Feedback Quantum Cascade Lasers on Silicon. Photonics 2016, 3, 35.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Photonics EISSN 2304-6732 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top