Recent Advances in Si-Compatible Nanostructured Photodetectors
Abstract
:1. Introduction
2. Thin Film and Quantum Well Photodetectors
3. Quantum Dot Photodetectors
4. Future Directions
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Model | Wavelength | Responsivity | Dark Current Density | Detectivity |
---|---|---|---|---|
nm | A/W | mA/cm2 | cm·Hz1/2·W−1 | |
One layer GeSn/Ge photoconductor [24] | 1550– 2000 | 0.18 | – | 1.0·109 |
One layer Ge/GeSn/Ge p-i-n photodiode [25] | 1550 | 0.22 | 70 | – |
One layer Ge/GeSn/Ge photodetector [26] | 1550– 2600 | 0.30 | 10 | 4.0·109 |
Black silicon Ge-on-Si p-i-n photodiode [27] | 1550 | 0.34 | 150 | – |
Multiple quantum wells GeSn/Ge photodetector [28] | 1550– 2200 | 0.11 | 40 | 2.1·108 |
Multiple quantum wells GeSn/Ge photodetector [48] | 1550– 2200 | 0.31 | 16 | 1.4·1010 |
One layer SiO2: Ge QDs/Ge photodetector [41] | 640– 1550 | 0.47 | – | – |
One layer SiO2: Ge QDs/Ge photodetector [42] | 400– 1550 | 1.12 | – | 2.0·1010 |
Multiple layer Ge QDs/Si photodetector [43] | up to 4000 | 0.43 | 10−6 | 6.2·1010 |
Multiple layer Ge QDs/SiGe photodetector [44] | up to 6000 | 40 | – | 1.4·1011 |
Si nanowire: Ge QDs/SiO2/Si phototransistor [47] | 1200– 1700 | 5.50 | – | 9.3·1011 |
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Douhan, R.; Lozovoy, K.; Kokhanenko, A.; Deeb, H.; Dirko, V.; Khomyakova, K. Recent Advances in Si-Compatible Nanostructured Photodetectors. Technologies 2023, 11, 17. https://doi.org/10.3390/technologies11010017
Douhan R, Lozovoy K, Kokhanenko A, Deeb H, Dirko V, Khomyakova K. Recent Advances in Si-Compatible Nanostructured Photodetectors. Technologies. 2023; 11(1):17. https://doi.org/10.3390/technologies11010017
Chicago/Turabian StyleDouhan, Rahaf, Kirill Lozovoy, Andrey Kokhanenko, Hazem Deeb, Vladimir Dirko, and Kristina Khomyakova. 2023. "Recent Advances in Si-Compatible Nanostructured Photodetectors" Technologies 11, no. 1: 17. https://doi.org/10.3390/technologies11010017