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Aerospace 2018, 5(3), 67; https://doi.org/10.3390/aerospace5030067

Failure Estimates for SiC Power MOSFETs in Space Electronics

1
Institute for Space and Defense Electronics, Department of Electrical Engineering and Computer Science, Vanderbilt University, VU Station B 351824, 2301 Vanderbilt Place, Nashville, TN 37235-1824, USA
2
Department of Electrical Engineering and Computer Science, Vanderbilt University, VU Station B 351824, 2301 Vanderbilt Place, Nashville, TN 37235-1824, USA
3
Department of Physics, University of Jyvaskyla, P.O. Box 35, FI-40014 Jyvaskyla, Finland
4
NASA Goddard Space Flight Center, Code 561.4, Greenbelt, MD 20771, USA
*
Author to whom correspondence should be addressed.
Received: 27 April 2018 / Revised: 7 June 2018 / Accepted: 20 June 2018 / Published: 22 June 2018
(This article belongs to the Special Issue Challenges in Reliability Analysis of Aerospace Electronics)
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Abstract

Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are space-ready in terms of typical reliability measures. However, single event burnout (SEB) due to heavy-ion irradiation often occurs at voltages 50% or lower than specified breakdown. Failure rates in space are estimated for burnout of 1200 V devices based on the experimental data for burnout and the expected heavy-ion linear energy transfer (LET) spectrum in space. View Full-Text
Keywords: single event effects; heavy ions; silicon carbide; single-event burnout; power devices; power MOSFETs; reliability; failure rates single event effects; heavy ions; silicon carbide; single-event burnout; power devices; power MOSFETs; reliability; failure rates
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Galloway, K.F.; Witulski, A.F.; Schrimpf, R.D.; Sternberg, A.L.; Ball, D.R.; Javanainen, A.; Reed, R.A.; Sierawski, B.D.; Lauenstein, J.-M. Failure Estimates for SiC Power MOSFETs in Space Electronics. Aerospace 2018, 5, 67.

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