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Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing
 
 
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Electronics 2019, 8(10), 1088; https://doi.org/10.3390/electronics8101088
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