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Electronics 2017, 6(4), 103; doi:10.3390/electronics6040103

X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit

Department of Radio Science and Engineering, Chungnam National University, Daejeon 34134, Korea
RFcore Co., Ltd., #C-708, Pundang Techno-Park, 744 Pangyo-ro, Yatap-dong, Pundang-gu, Sungnam, Gyeonggi 13510, Korea
Author to whom correspondence should be addressed.
Received: 21 November 2017 / Revised: 24 November 2017 / Accepted: 24 November 2017 / Published: 28 November 2017
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This paper presents an X-band GaN HEMT power amplifier with a third harmonic-tuned circuit for a higher power density per area and a higher power-added efficiency (PAE) using a 0.25 μm GaN HEMT process of WIN semiconductors, Inc. The optimum load impedances at the fundamental and third harmonic frequencies are extracted from load-pull simulations at the transistor’s extrinsic plane, including the drain-source capacitance and the series drain inductance. The third harmonic-tuned circuit is effectively integrated with the output matching circuit at the fundamental frequency, without complicating the whole output matching circuit. The input matching circuit uses a lossy matching scheme, which allows a good return loss and a simple LC low-pass circuit configuration. The fabricated power amplifier monolithic microwave integrated circuit (MMIC) occupies an area of 13.26 mm2, and shows a linear gain of 20 dB or more, a saturated output power of 43.2~44.7 dBm, and a PAE of 35~37% at 8.5 to 10.5 GHz. View Full-Text
Keywords: X-band; GaN; HEMT; power amplifier; MMIC; harmonic-tuned X-band; GaN; HEMT; power amplifier; MMIC; harmonic-tuned

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Bae, K.-T.; Lee, I.-J.; Kang, B.; Sim, S.; Jeon, L.; Kim, D.-W. X-Band GaN Power Amplifier MMIC with a Third Harmonic-Tuned Circuit. Electronics 2017, 6, 103.

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