3.1.1. Optical Properties
In the case of thin solid films deposited for optical applications, the most significant tests comprise light transmission measurements in the UV-Vis range and ellipsometric examinations. Together, they supply the principal information concerning such optical parameters of the material as levels of light absorption or transmission as well as values of optical gap (Eg), index of refraction (n) and extinction coefficient (k). In addition, they also allow one to assess film thickness (d) and surface roughness (Sr). Most of these parameters can be relatively easily correlated with the structure of the coatings. This is a reason both tests were selected as simple and fast criteria for the selection of an appropriate precursor of gradient films on one hand, and for the optimization of the deposition process on the other.
Light transmission measurements were carried out within the wavelength range of 200–1000 nm. The results for the coatings prepared from tetramethyldisilazane and from hexamethyldisilazane are presented in
Figure 1, below. These coatings were deposited under conditions of different composition of working gases in order to assess the effect of nitrogen-to-oxygen ratio on their optical parameters. The total flow rate of the gas mixture was constant and amounted to 20 sccm with the actual composition of that mixture being represented by the ratio of respective flow rates also expressed in sccm units.
An analysis of the results shows that all the coatings are characteristic of good optical properties revealed by an appropriate system of interference maxima. Independent of the type of precursor, films deposited under conditions of an excess of nitrogen in the reaction mixture exhibit sharper interference maxima compared to those prepared at the excess of oxygen. This is a consequence of the fact that silicon nitrides and carbonitrides are characterized by higher values of refractive index than those of the respective oxides.
A comparison of the spectra presented in
Figure 1 allows one to conclude that the coatings deposited from tetramethyldisilazane are substantially thicker that those obtained from hexamethyldisilazane, since they exhibit a larger number of interference maxima. One should remember that the time of deposition was the same in all cases, and amounted to one minute. The thickness difference is a result of a substantially higher content of carbon incorporated into the coating prepared from TMDSN [
26]. An increased content of carbon in the films deposited from this precursor is also revealed by their values of absorption threshold shifted to the infrared direction. The absorption threshold of the films is also dependent on the composition of the gas mixture—the films deposited at the excess of nitrogen are characteristic of a shift towards larger wavelengths (lower energy). In addition, on the contrary, the coatings prepared under conditions of oxygen excess exhibit an absorption threshold shift towards lower wavelengths and higher energy. It is interesting to note, however, that this tendency, generally shown by the films deposited from both precursors, is substantially stronger in the case of the coatings made from HMDSN.
The effect described above finds its confirmation in the magnitudes of the optical gap
Eg calculated for the respective coatings. For that purpose, the Tauc formalism was applied to the results of absorption measurements within the wavelength range of 200–1000 nm. The resulting
Eg values for the coatings prepared from both precursors at different compositions of the working gas are presented in
Table 3.
In general, literature reports reveal higher magnitudes of optical gap of SiO
2 coatings than those of silicon nitride [
27,
28,
29]. As seen in
Table 2, the
Eg value for the films deposited from TMDSN under pure oxygen conditions amounts to 3.11 eV. This result is close enough to the literature data showing the highest values of optical gap being typical for silicon oxides and remaining in the range of 3.5–9.3 eV [
30,
31]. The coatings made of silicon nitride are characterized by lower magnitudes of optical gap. In our case, the
Eg value for the films deposited from TMDSN in pure nitrogen equals 2.93 eV, which remains in agreement with the literature data, where values within the range of 2.4–4.75 eV are reported [
32]. One has to remember that the coatings presented in this work contain substantial amounts of carbon in their structure. Therefore, the respective values of silicon carbide should also be considered, and they are still lower than those of silicon nitride. Taking all the above arguments into account, one should state that a supplement of carbon lowers the magnitude of optical gap in both silicon oxide and silicon nitride coatings and the values recorded in this work remain well within the ranges reported in the literature [
33,
34,
35].
An application of VASE spectroscopic ellipsometry allows one to determine the values of n and k coefficients as well as thickness and surface roughness of the material investigated. The respective data for the coatings deposited from both precursor compounds under different compositions of working gas are presented in
Table 2, below. All the VASE measurements were conducted within the spectral range of 200–1000 nm, using three different angles of incidence of 65°, 70° and 75°. These values were selected in such a manner that they comprise the Brewster angle for the coatings produced. As a basis for the calculations, the Cauchy’s model, often used for this type of materials [
36,
37,
38], was assumed. An example of ψ angle measurement results together with the fitting of the above model for a coating prepared in pure oxygen is presented in
Figure 2. When considering the relationship presented, one can observe a slight departure of the model from the experimental data within the 250–280 nm range, resulting from higher absorption in this range. Further studies have shown a responsibility for that absorption of carbon containing chemical moieties. Despite the above difference, the MSE fitting error is small and it amounts to 12.
The results acquired from ellipsometric measurements conducted for the coatings deposited from both TMDSN and HMDSN at different oxygen concentrations are presented in
Figure 3. They show unambiguously that, by changing the composition of the gaseous reaction mixture, one is able to deposit coatings characterized by low index of refraction when depositing in pure oxygen atmosphere and those of high index of refraction when using a pure nitrogen atmosphere. When, however, a mixture of oxygen and nitrogen is used as the working gas, then depending on their proportions, a coating characterized by a refractive index within the range of 2.31–1.99 for TMDSN precursor and within the range of 2.22–1.65 for HMDSN precursor is obtained. It was thus proven in these studies that, by using a gaseous reaction mixture of a changing composition, coatings of variable optical parameters can be obtained.
The relationships presented above reveal high magnitudes of extinction coefficient of the coatings. They are still higher in the case of the films obtained under high nitrogen content conditions and lower for those deposited at high oxygen concentrations. In thin solid films, the extinction coefficient k usually depends on two factors. One is light absorption. As revealed by the UV-Vis transmission measurements, the materials under investigation primarily absorb in the 200–400 nm range, with substantially higher absorption exhibited by the coatings produced at higher nitrogen concentrations. This effect is a result of a presence of carbon in these films. Another important phenomenon is surface roughness. The rougher the surface is, the larger the fraction of radiation that undergoes scattering, thus affecting the magnitude of extinction coefficient. Ellipsometric measurements allow one to assess the roughness S
r of a given sample. The results obtained for the coatings under investigation are presented in
Table 2 below. As seen in the table, surface roughness of the coatings deposited from TMDSN is far higher than that of the films obtained from HMDSN. This finding has been confirmed by surface topography examination with the help of AFM microscopy.
Ellipsometric measurements also provide data concerning sample thickness. The results presented in
Table 2 show that, despite the fact that for all the samples deposition time amounts to 60 s, the coatings deposited from TMDSN are ca. two times thicker than those obtained from HMDSN. In both precursor molecules, there are two atoms of silicon. At the same time, there are four atoms of carbon in TMDSN and six atoms of carbon in HMDSN. The thickness and deposition rate differences result from the deposition mechanism, in which an important role is played by silyl radicals [
39]. Due to the differences in bond energy, these radicals are much easier to form by a cleavage of Si-H bonds (
E = 298 kJ/mole) than by a decomposition of Si-C bonds (
E = 435 kJ/mole) [
40]. A presence of the former bonds in a TMSDN molecule substantially enhances deposition, at the same time leading to an unfortunate incorporation of larger amounts of carbon.
From the results presented above, one can conclude that the optical quality of the coatings strongly depends on the composition of the reaction mixture. Those deposited in pure nitrogen atmosphere are characterized by high values of refractive index, amounting to 2.3 and to 2.2 for TMDSN and HMDSN, respectively. For samples deposited in pure oxygen, the same values amount to 1.99 and 1.65. In addition, the coatings deposited from TMDSN are of a lower optical quality than those obtained from HMDSN. An index of refraction of stoichiometric silica equals 1.45 [
41]. To design and manufacture optical interference filters, one needs two materials: one of a high (
nH) and one of a low (
nL) value of refractive index. These two values should considerably differ from one another. In the case of the coatings deposited from TMDSN, that difference amounts to 0.32, and it is equal 0.57 for those obtained from HMDSN. In addition, the films deposited from TMDSN are characterized by higher absorption in the range of 200–400 nm.
3.1.3. Elemental Composition and Chemical Structure Studies Conducted with the Help of XPS Spectroscopy
XPS studies allowed for an assessment of qualitative as well as quantitative composition of the coatings deposited under conditions of different composition of the working gas mixture. An example of a wide scan XPS spectrum of a coating deposited in pure nitrogen atmosphere is shown in
Figure 5, while
Table 5 presents elemental composition of the films compared with that of the HMDSN precursor compound.
An analysis of the above data reveals a close relationship between the elemental composition of the coatings and the N
2/O
2 proportion in the working atmosphere. The silicon content remains at a relatively stable level of 22.7–26.4 at.% for all the samples, with a weak increasing tendency with increasing concentration of oxygen in the working gas. A similar result was reported by Chang et al. [
42], with a difference being a lack of reactive atmosphere. Both in their studies and in our work, the concentration of silicon in the films remains close to its content in the precursor compound.
The amount of nitrogen in HMDSN equals 11.1 at.%. In the coating deposited in pure nitrogen atmosphere, that content increases to 46 at.%. This result strongly indicates that, under plasma conditions, nitrogen becomes a reactive gas able to form chemical bonds with other elements. In the sample prepared in the 1:1 N2/O2 atmosphere, the content of nitrogen drops down to 20.5 at.%, while the coating deposited under pure oxygen conditions contains 5.8 at.% of nitrogen only. In the latter case, the entire amount of this element very likely originates from the precursor and its presence in the coating may be a result of secondary processes.
Oxygen is characterized by a high affinity towards silicon. This is a reason this element content in a coating deposited under pure nitrogen atmosphere still amounts to ca. 5 at.%. To a large extent, this is supposed to be surface bound element resulting from a reaction of atmospheric oxygen with the coating surface after its exposure to the atmosphere. Following their etching, the oxygen content in the films, revealed by XPS measurements, drops down to 3.4 at.%, and this figure is entirely acceptable. In the coatings deposited under increasing oxygen concentration in the working gas, the content of oxygen increases dramatically to reach a value exceeding 54.4 at.%.
An interesting behavior is shown by carbon. Its content in the films is a subject of substantial variations, depending on the composition of the working gas mixture. Carbon content in the surface layer of a coating deposited under pure nitrogen conditions amounts to 25.8 at.%. When deposited in a mixed nitrogen/oxygen atmosphere, the coating contains 19.9 at.% carbon. Finally, for a coating produced in pure oxygen, C content further decreases to 13.3 at.%. This may be explained by a partial removal, under conditions of precursor fragmentation, of carbon in a form of its oxides CO2 and CO. The larger oxygen concentration in the gas mixture, the more effective is that process. When film deposition is performed in pure nitrogen, no oxides are formed and carbon is removed in a form of simple hydrocarbons, principally methane. However, this process is far less efficient, which explains larger carbon concentrations in the coatings deposited under pure nitrogen conditions. In addition, it has to be noted that the content of carbon in the coatings, independent of whether deposited in the presence of oxygen or in the presence of nitrogen, is much lower that its concentration in the precursor compound. This effect points to a substantial fragmentation of the precursor molecules taking place in plasma, wherein the final content of carbon to a large extent results from secondary reactions.
Similar is the situation of nitrogen in the coatings investigated. In the case of materials deposited under pure nitrogen conditions, its content amounts to 46.5 at.%, and is over four times higher than that of the precursor compound. It convincingly indicates a reactive character of this element, thus forming Si-N bonds under plasma conditions applied. When, however, oxygen is used as the deposition process working atmosphere, the content of nitrogen in the resulting coatings deceases down to 5.8 at.%, a figure that is lower than that of the precursor compound.
Further characteristics of the coatings chemical structure is based on deconvolution of the Si 2p, N 1s and C 1s XPS spectral bands, therefore enabling a detailed analysis of chemical bonding present in that structure as a function of oxygen content in the working atmosphere. Such an analysis was performed for three different samples: one deposited under pure nitrogen condition (H-20 N
2,
Figure 6), one obtained in an equimolar nitrogen/oxygen mixture (H-10 O
2/10 N
2,
Figure 6) and one prepared in pure oxygen (H-20 O
2,
Figure 6).
Deconvolution of the Si 2p band points to a dominant role of a Si–N bond in the samples deposited under pure nitrogen conditions. Si–O bonds are also present, confirming oxygen affinity towards silicon. Finally, the spectrum also indicates the presence of Si–C bonding. In the coatings deposited under mixed N2/O2 atmosphere, the amount of Si–O bonds increases and a band characteristic for SiO2 appears, all that at the expense of decreasing contents of Si–N and Si–C bonds. When deposited under pure oxygen atmosphere, the coatings are characterized by dominant XPS bands corresponding to both Si–O and SiO2 chemical bonding.
Deconvolution process of the XPS N 1s band confirms a dominant role of a Si–N bond in the samples deposited under pure nitrogen conditions. Along an increasing amount of oxygen in the working atmosphere, the content of both C–N and N–O bonds in the coatings also rises. In fact, an increasing amount of N–O bonds, absent in the precursor molecule, points to plasma energetic conditions allowing for a substantial fragmentation of that molecule.
On the basis of XPS results one can state that, with an increasing concentration of oxygen in the working atmosphere, the amount of silicon–oxygen bonding (102.8 eV) in the coatings increases, and that of carbon–nitrogen bonding (399.1 eV) declines. In terms of optical properties of these materials, it indicates a drop of their index of refraction “n”.
Deconvolution of the C 1s XPS band reveals a presence of the following carbon bonds: Si–C (283 eV), C–C (C–H) (284.8 eV), C–N (285.5 eV), as well as C–O (285.5 eV) and C=O (287.8 eV). Here, too, one can observe a decrease of the amount of Si–C and Si–N chemical bonds present in the coatings along an increasing concentration of oxygen in the working gas mixture. A decreasing content of carbon in these films makes an additional proof of carbon removal (in the form of carbon oxides) from an oxygen rich working atmosphere.
3.1.4. Chemical Composition Studies by FTIR Spectroscopy
Structural studies were performed on selected samples of SiONC coatings deposited from HMDSN precursor at negative self-bias potential of −880 V and three different compositions of the working atmosphere: pure oxygen, 1:1 oxygen/nitrogen mixture and pure nitrogen. The respective FTIR spectra, recorded within the spectral range of 4000–400 cm
−1, are presented in
Figure 7. To enhance their clarity, the spectra have been divided into two ranges: 4000–1400 cm
−1 (a) and 1300–400 cm
−1 (b).
In the spectra presented in
Figure 7a, characteristic bands corresponding to the following molecular vibrations can be identified:
3440–3150 cm−1—N–H bond stretching vibrations,
3000–2800 cm−1—symmetric and asymmetric stretching vibrations of C-H bonds belonging to CH2 and CH3 groups,
2200 cm−1—C≡N bond stretching vibrations
2170–2020 cm−1—Si–H bond stretching vibrations,
1880 cm−1—C=O bond stretching vibrations,
1640 cm−1—C=N bond stretching vibrations,
1550 cm−1—N–H group deformation vibrations,
1475–1440 cm
−1—deformation vibrations of CH
2 and CH
3 groups [
43,
44].
It appears from the FTIR spectra that addition of nitrogen to the working atmosphere results in an enrichment of the coating structure with organic CH3 and CH2 groups originating from the precursor. In addition, a proportional increase of the amount of Si–H bond is also noted. A lowering of the C–H bond content in the films deposited in the oxygen atmosphere is interpreted as a result of a formation of volatile CO2 and H2O oxides in the course of the PE CVD process. These by-products are easily removed from the environment and they do not contribute to the process of deposition. As a result, the coating thickness drops down. In the case of N–H bonds, absorbing within the spectral range of 3440–3150 cm−1, their existence is also observed in the case of the samples deposited under pure nitrogen atmosphere. It is connected to the presence of nitrogen in the precursor molecule. Certainly, the amount N-H bonds in the coating structure increases with an increasing concentration of nitrogen in the reaction mixture. A shift of a 2200 cm−1 band, corresponding to the vibrations of C–N bonds towards higher wavenumbers, is also observed for the coatings deposited under oxygen atmosphere.
Within the spectral range of 1300–400 cm
−1, shown in
Figure 7b, several bands corresponding to chemical bonds of elements having significant effect on the coating optical properties have been separated. They were subjected to a detailed deconvolution procedure with the resulting surface areas of particular band components presented in
Table 6. In the case of the coatings deposited under pure oxygen atmosphere, absorption bands corresponding to the following chemical moieties were selected: Si–O–(CH
x) groups, as well as stoichiometric SiO
2 and non-stoichiometric SiO
x silicon oxide bonds. The strongest band, recorded at 1035 cm
−1 and corresponding to stretching vibrations of stoichiometric silicon dioxide Si-O bonds, is accompanied by a substantial maximum at 445 cm
−1, resulting from rocking vibrations of that group. A presence of such a large amount of oxygen in the coating is responsible for a low value of its refractive index equal 1.65. An increase of nitrogen content in the working environment results in an increasing number of Si–NH–Si bonds absorbing at 953 cm
−1 as well as, typical for ceramic materials, Si–N bonds resonant with the radiation of the wavenumber of 830 cm
−1. Additionally, Si–C bonds, typical for silicon carbide, are formed under these conditions. A presence of both these bond structures is responsible for an increase of the coatings refractive index up to 2.2. This means that, by a strict control of nitrogen content in the working N
2/O
2 atmosphere, one should be able to substantially affect chemical structure of the films and, therefore, to regulate, within a certain range, the magnitude of refractive index n of the resulting coating.