Next Article in Journal
The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide
Previous Article in Journal
Formation of Fe-Te Nanostructures during in Situ Fe Heavy Doping of Bi2Te3
 
 
Article

Article Versions Notes

Nanomaterials 2019, 9(5), 783; https://doi.org/10.3390/nano9050783
Action Date Notes Link
article xml file uploaded 22 May 2019 12:31 CEST Original file -
article xml uploaded. 22 May 2019 12:31 CEST Update https://www.mdpi.com/2079-4991/9/5/783/xml
article pdf uploaded. 22 May 2019 12:31 CEST Version of Record https://www.mdpi.com/2079-4991/9/5/783/pdf
article html file updated 23 May 2019 11:31 CEST Original file -
article html file updated 23 May 2019 12:17 CEST Update -
article html file updated 5 June 2019 20:41 CEST Update -
article html file updated 20 October 2019 13:37 CEST Update -
article html file updated 12 February 2020 14:20 CET Update https://www.mdpi.com/2079-4991/9/5/783/html
Back to TopTop