Induced Photonic Response of ZnO Nanorods Grown on Oxygen Plasma-Treated Seed Crystallites
AbstractWe examined the influence of O2 plasma treatment for the ZnO seed layer (SL) crystallites on the material characteristics of ZnO nanorods (NRs) synthesized by the hydrothermal method. Diode photocurrent and photo-response transient characteristics of the p-Si/n-ZnO-NR heterojunction-based ultraviolet (UV) photodetectors were also examined according to the plasma treatment for the SLs. The superior optical properties of NRs were measured from the photoluminescence by exhibiting 4.6 times greater near-band edge emission when grown on the O2-plasma-treated SL. The degree of (002) orientation of the NR crystals was improved from 0.67 to 0.95, as revealed by X-ray diffraction analysis, and a higher NR surface density of ~80 rods/μm2 with a smaller mean diameter of 65 nm were also observed by the SL modification using plasma-treatment. It was shown by X-ray photo-electron spectroscopy that this improvement of NR crystalline quality was due to the recovery of stoichiometric oxygen with significant reduction of oxygenated impurities in the SL crystals and the subsequent low-energy growth mode for the NRs. UV PDs fabricated by the proposed SL plasma treatment technique showed significantly enhanced UV-to-dark current ratio from 2.0 to 83.7 at a forward bias of +5 V and faster photo-response characteristics showing the reduction in recovery time from 16 s to 9 s. View Full-Text
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Khan, W.; Ajmal, H.M.S.; Khan, F.; Huda, N.U.; Kim, S.-D. Induced Photonic Response of ZnO Nanorods Grown on Oxygen Plasma-Treated Seed Crystallites. Nanomaterials 2018, 8, 371.
Khan W, Ajmal HMS, Khan F, Huda NU, Kim S-D. Induced Photonic Response of ZnO Nanorods Grown on Oxygen Plasma-Treated Seed Crystallites. Nanomaterials. 2018; 8(6):371.Chicago/Turabian Style
Khan, Waqar; Ajmal, Hafiz M.S.; Khan, Fasihullah; Huda, Noor U.; Kim, Sam-Dong. 2018. "Induced Photonic Response of ZnO Nanorods Grown on Oxygen Plasma-Treated Seed Crystallites." Nanomaterials 8, no. 6: 371.
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