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Nanomaterials 2016, 6(11), 206; doi:10.3390/nano6110206

Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation

1
CNR-SPIN Salerno, via Giovanni Paolo II, 132, 84084 Fisciano, Italy
2
Dipartimento di Fisica, Università di Salerno, via Giovanni Paolo II, 132, 84084 Fisciano, Italy
3
Dipartimento di Scienze e Tecnologie, Università del Sannio, via Port’Arsa 11, 82100 Benevento, Italy
4
Dipartimento di Scienze Fisiche e Chimiche, Università dell’Aquila, Via Vetoio, 67100 L’Aquila, Italy
*
Author to whom correspondence should be addressed.
Academic Editor: Thomas Nann
Received: 22 September 2016 / Revised: 4 November 2016 / Accepted: 7 November 2016 / Published: 10 November 2016
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Abstract

We studied the effects of low-energy electron beam irradiation up to 10 keV on graphene-based field effect transistors. We fabricated metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO2, obtaining specific contact resistivity ρ c 19 k Ω · µ m 2 and carrier mobility as high as 4000 cm2·V−1·s−1. By using a highly doped p-Si/SiO2 substrate as the back gate, we analyzed the transport properties of the device and the dependence on the pressure and on the electron bombardment. We demonstrate herein that low energy irradiation is detrimental to the transistor current capability, resulting in an increase in contact resistance and a reduction in carrier mobility, even at electron doses as low as 30 e/nm2. We also show that irradiated devices recover their pristine state after few repeated electrical measurements. View Full-Text
Keywords: graphene; field-effect transistor; electron irradiation; contact resistance graphene; field-effect transistor; electron irradiation; contact resistance
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Giubileo, F.; Di Bartolomeo, A.; Martucciello, N.; Romeo, F.; Iemmo, L.; Romano, P.; Passacantando, M. Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation. Nanomaterials 2016, 6, 206.

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