Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation
CNR-SPIN Salerno, via Giovanni Paolo II, 132, 84084 Fisciano, Italy
Dipartimento di Fisica, Università di Salerno, via Giovanni Paolo II, 132, 84084 Fisciano, Italy
Dipartimento di Scienze e Tecnologie, Università del Sannio, via Port’Arsa 11, 82100 Benevento, Italy
Dipartimento di Scienze Fisiche e Chimiche, Università dell’Aquila, Via Vetoio, 67100 L’Aquila, Italy
Author to whom correspondence should be addressed.
Academic Editor: Thomas Nann
Received: 22 September 2016 / Revised: 4 November 2016 / Accepted: 7 November 2016 / Published: 10 November 2016
We studied the effects of low-energy electron beam irradiation up to 10 keV on graphene-based field effect transistors. We fabricated metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO2
, obtaining specific contact resistivity
and carrier mobility as high as 4000 cm2
. By using a highly doped p-Si/SiO2
substrate as the back gate, we analyzed the transport properties of the device and the dependence on the pressure and on the electron bombardment. We demonstrate herein that low energy irradiation is detrimental to the transistor current capability, resulting in an increase in contact resistance and a reduction in carrier mobility, even at electron doses as low as 30 e−
. We also show that irradiated devices recover their pristine state after few repeated electrical measurements.
This is an open access article distributed under the Creative Commons Attribution License
which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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MDPI and ACS Style
Giubileo, F.; Di Bartolomeo, A.; Martucciello, N.; Romeo, F.; Iemmo, L.; Romano, P.; Passacantando, M. Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation. Nanomaterials 2016, 6, 206.
Giubileo F, Di Bartolomeo A, Martucciello N, Romeo F, Iemmo L, Romano P, Passacantando M. Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation. Nanomaterials. 2016; 6(11):206.
Giubileo, Filippo; Di Bartolomeo, Antonio; Martucciello, Nadia; Romeo, Francesco; Iemmo, Laura; Romano, Paola; Passacantando, Maurizio. 2016. "Contact Resistance and Channel Conductance of Graphene Field-Effect Transistors under Low-Energy Electron Irradiation." Nanomaterials 6, no. 11: 206.
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