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Controlling the Nanoscale Patterning of AuNPs on Silicon Surfaces
Cardiff School of Pharmacy and Pharmaceutical Sciences, Cardiff University, Cardiff, CF10 3NB, UK
School of Chemistry, Cardiff Catalysis Institute, Cardiff University, Cardiff, CF10 3AT, UK
* Author to whom correspondence should be addressed.
Received: 11 January 2013; in revised form: 22 February 2013 / Accepted: 14 March 2013 / Published: 21 March 2013
Abstract: This study evaluates the effectiveness of vapour-phase deposition for creating sub-monolayer coverage of aminopropyl triethoxysilane (APTES) on silicon in order to exert control over subsequent gold nanoparticle deposition. Surface coverage was evaluated indirectly by observing the extent to which gold nanoparticles (AuNPs) deposited onto the modified silicon surface. By varying the distance of the silicon wafer from the APTES source and concentration of APTES in the evaporating media, control over subsequent gold nanoparticle deposition was achievable to an extent. Fine control over AuNP deposition (AuNPs/μm2) however, was best achieved by adjusting the ionic concentration of the AuNP-depositing solution. Furthermore it was demonstrated that although APTES was fully removed from the silicon surface following four hours incubation in water, the gold nanoparticle-amino surface complex was stable under the same conditions. Atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) were used to study these affects.
Keywords: vapour-phase deposition; APTES; gold; nanoparticle; chemical nanopatterning
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Williams, S.E.; Davies, P.R.; Bowen, J.L.; Allender, C.J. Controlling the Nanoscale Patterning of AuNPs on Silicon Surfaces. Nanomaterials 2013, 3, 192-203.
Williams SE, Davies PR, Bowen JL, Allender CJ. Controlling the Nanoscale Patterning of AuNPs on Silicon Surfaces. Nanomaterials. 2013; 3(1):192-203.
Williams, Sophie E.; Davies, Philip R.; Bowen, Jenna L.; Allender, Chris J. 2013. "Controlling the Nanoscale Patterning of AuNPs on Silicon Surfaces." Nanomaterials 3, no. 1: 192-203.