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Appl. Sci. 2018, 8(9), 1574; https://doi.org/10.3390/app8091574

Performance of InGaN/GaN Light Emitting Diodes with n-GaN Layer Embedded with SiO2 Nano-Particles

1
Department of Electronic Information Materials Engineering, Chonbuk National University, Jeonju 54896, Korea
2
Department of Optical Engineering, Kongju National University, Cheonan 31080, Korea
3
Department of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology MISiS, 119049 Moscow, Russia
4
Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea
*
Authors to whom correspondence should be addressed.
Received: 9 August 2018 / Revised: 29 August 2018 / Accepted: 4 September 2018 / Published: 6 September 2018
(This article belongs to the Special Issue Internal Quantum Efficiency of III-Nitride Light-Emitting Diodes)
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Abstract

We demonstrate high-performance InGaN/GaN blue light emitting diodes (LEDs) embedded with an air-void layer produced by a dry-etch of nano-pillars in an n-GaN layer grown on patterned sapphire substrate (PSS), filling the space between nano-pillars with SiO2 nano-particles (NPs) and subsequent epitaxial overgrowth. The structure exhibits enhanced output power compared to similarly grown reference conventional LED without the air-void layer. This change in growth procedure contributes to the increase of internal quantum efficiency (IQE) and light extraction efficiency (LEE) resulting in a 13.5% increase of light output. LEE is 2 times more affected than IQE in the modified structure. Simulation demonstrates that the main effect causing the LEE changes is due to the emitted light being confined within the upper space above the air-void layer and thus enhancing the light scattering by the SiO2 NPs and preferential light via front surface. View Full-Text
Keywords: nano-pillars; nano-particles; light extraction efficiency; internal quantum efficiency; finite-difference time-domain method nano-pillars; nano-particles; light extraction efficiency; internal quantum efficiency; finite-difference time-domain method
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Yom, H.-S.; Yang, J.-K.; Polyakov, A.Y.; Lee, I.-H. Performance of InGaN/GaN Light Emitting Diodes with n-GaN Layer Embedded with SiO2 Nano-Particles. Appl. Sci. 2018, 8, 1574.

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