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Appl. Sci. 2018, 8(1), 54; https://doi.org/10.3390/app8010054

Correlation between the Golden Ratio and Nanowire Transistor Performance

1
School of Engineering, University of Glasgow, Glasgow G12 8LT, UK
2
Electrical Engineering Department, College of Engineering, Al-Mustansiriyah University, Baghdad 10052, Iraq
This paper is an extended version of: Al-Ameri, T., Georgiev, V.P., Adamu-Lema, F. and Asenov, A. Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study. In Proceedings of the 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kamakura, Japan, 7–9 September 2017.
Received: 25 November 2017 / Revised: 13 December 2017 / Accepted: 22 December 2017 / Published: 2 January 2018
(This article belongs to the Special Issue Silicon Nanowires and Their Applications)
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Abstract

An observation was made in this research regarding the fact that the signatures of isotropic charge distributions in silicon nanowire transistors (NWT) displayed identical characteristics to the golden ratio (Phi). In turn, a simulation was conducted regarding ultra-scaled n-type Si (NWT) with respect to the 5-nm complementary metal-oxide-semiconductor (CMOS) application. The results reveal that the amount of mobile charge in the channel and intrinsic speed of the device are determined by the device geometry and could also be correlated to the golden ratio (Phi). This paper highlights the issue that the optimization of NWT geometry could reduce the impact of the main sources of statistical variability on the Figure of Merit (FoM) of devices. In the context of industrial early successes in fabricating vertically stacked NWT, ensemble Monte Carlo (MC) simulations with quantum correction are used to accurately predict the drive current. This occurs alongside a consideration of the degree to which the carrier transport in the vertically stacked lateral NWTs are complex. View Full-Text
Keywords: silicon nanowire transistors; quantum confinement; golden ratio; technology computer aided design (TCAD); drift diffusion; Poisson-Schrödinger; simulations; 3D-Monte Carlo silicon nanowire transistors; quantum confinement; golden ratio; technology computer aided design (TCAD); drift diffusion; Poisson-Schrödinger; simulations; 3D-Monte Carlo
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Supplementary material

  • Externally hosted supplementary file 1
    Doi: 10.23919/SISPAD.2017.8085263
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Al-Ameri, T. Correlation between the Golden Ratio and Nanowire Transistor Performance. Appl. Sci. 2018, 8, 54.

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