High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode
AbstractThe characteristics of Cu alloy (0.3 wt. % Cr, 0.2 wt. % Zr) thin film deposited by direct current (DC) magnetron sputtering deposition were investigated. The conductivity and adhesion of the Cu-0.3%Cr-0.2%Zr films were optimized by increasing the sputter power to 150 W and reducing the sputter pressure to 2 mTorr. With an annealing process (at 300 °C for 1 h in argon ambient atmosphere), the resistivity of the alloy film decreased from 4.80 to 2.96 μΩ·cm, and the adhesion classification increased from 2B to 4B on glass substrate. X-ray photoelectron spectroscopy (XPS) analysis showed that Cr aggregated toward the surface of the film and formed a self-protection layer in the annealing process. Transmission electron microscopy (TEM) indicated the aggregation and migration of Cr in the annealing process. A further X-ray diffraction (XRD) analysis showed that Cu2O appeared when the annealing temperature reached above 350 °C, which accounts for the increase of the resistivity. Based on Al2O3 and SiO2 substrate surfaces, the Cu-0.3%Cr-0.2%Zr film also showed high conductivity and adhesion, which has a potential in the application of Cu gate electrodes for thin film transistor (TFT). View Full-Text
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Peng, J.; Lu, K.; Hu, S.; Fang, Z.; Ning, H.; Wei, J.; Zhu, Z.; Zhou, Y.; Wang, L.; Yao, R.; Lu, X. High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode. Appl. Sci. 2017, 7, 820.
Peng J, Lu K, Hu S, Fang Z, Ning H, Wei J, Zhu Z, Zhou Y, Wang L, Yao R, Lu X. High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode. Applied Sciences. 2017; 7(8):820.Chicago/Turabian Style
Peng, Junbiao; Lu, Kuankuan; Hu, Shiben; Fang, Zhiqiang; Ning, Honglong; Wei, Jinglin; Zhu, Zhennan; Zhou, Yicong; Wang, Lei; Yao, Rihui; Lu, Xubing. 2017. "High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode." Appl. Sci. 7, no. 8: 820.
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