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Appl. Sci. 2017, 7(6), 561;

Waveguiding Light into Silicon Oxycarbide

Dipartimento di Elettronica, Informazione e Bioingegneria (DEIB), Politecnico di Milano, via Ponzio 34/5, 20133 Milan, Italy
Department of Telecommunications Engineering, Mehran University of Engineering & Technology, Jamshoro 76062, Sindh, Pakistan
Author to whom correspondence should be addressed.
Academic Editor: Boris Malomed
Received: 1 May 2017 / Revised: 18 May 2017 / Accepted: 25 May 2017 / Published: 30 May 2017
(This article belongs to the Special Issue Guided-Wave Optics)
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In this work, we demonstrate the fabrication of single mode optical waveguides in silicon oxycarbide (SiOC) with a high refractive index n = 1.578 on silica (SiO2), exhibiting an index contrast of Δn = 8.2%. Silicon oxycarbide layers were deposited by reactive RF magnetron sputtering of a SiC target in a controlled process of argon and oxygen gases. The optical properties of SiOC film were measured with spectroscopic ellipsometry in the near-infrared range and the acquired refractive indices of the film exhibit anisotropy on the order of 10−2. The structure of the SiOC films is investigated with atomic force microscopy (AFM) and scanning electron microscopy (SEM). The channel waveguides in SiOC are buried in SiO2 (n = 1.444) and defined with UV photolithography and reactive ion etching techniques. Propagation losses of about 4 dB/cm for both TE and TM polarizations at telecommunication wavelength 1550 nm are estimated with cut-back technique. Results indicate the potential of silicon oxycarbide for guided wave applications. View Full-Text
Keywords: silicon oxycarbide; optical waveguides; optical materials; guided waves; integrated optics silicon oxycarbide; optical waveguides; optical materials; guided waves; integrated optics

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Memon, F.A.; Morichetti, F.; Melloni, A. Waveguiding Light into Silicon Oxycarbide. Appl. Sci. 2017, 7, 561.

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