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Appl. Sci. 2017, 7(10), 1099; https://doi.org/10.3390/app7101099

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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Received: 7 September 2017 / Accepted: 17 October 2017 / Published: 24 October 2017
(This article belongs to the Special Issue Thin-Film Transistors)
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Abstract

The nitrogen-doped amorphous oxide semiconductor (AOS) thinfilm transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure was composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) and gave the corresponding TFT devices large field-effect mobility due to the presence of double conduction channels. The a-IZO:N/a-IGZO:N TFTs, in particular, showed even better electrical performance (µFE = 15.0 cm2・V−1・s−1, SS = 0.5 V/dec, VTH = 1.5 V, ION/IOFF = 1.1 × 108) and stability (VTH shift of 1.5, −0.5 and −2.5 V for positive bias-stress, negative bias-stress, and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, we assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might explain the better behavior of the corresponding TFTs. View Full-Text
Keywords: amorphous oxide semiconductor (AOS); thin film transistor (TFT); nitrogen-doped amorphous InGaZnO (a-IGZO:N); nitrogen-doped amorphous InZnO (a-IZO:N); hetero-structure amorphous oxide semiconductor (AOS); thin film transistor (TFT); nitrogen-doped amorphous InGaZnO (a-IGZO:N); nitrogen-doped amorphous InZnO (a-IZO:N); hetero-structure
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Xie, H.; Liu, G.; Zhang, L.; Zhou, Y.; Dong, C. Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers. Appl. Sci. 2017, 7, 1099.

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