Next Article in Journal
Electrospinning Fabrication and Performance Evaluation of Polyacrylonitrile Nanofiber for Air Filter Applications
Next Article in Special Issue
A Micro-Processor-Based Feedback Stabilization Scheme for High-Q, Non-Linear Silicon Resonators
Previous Article in Journal
Structural Behavior of a Long-Span Partially Earth-Anchored Cable-Stayed Bridge during Installation of a Key Segment by Thermal Prestressing
Article Menu

Export Article

Open AccessArticle
Appl. Sci. 2016, 6(8), 233; doi:10.3390/app6080233

Atomic Layer Deposition TiO2 Films and TiO2/SiNx Stacks Applied for Silicon Solar Cells

1
Institute of Photonic System, National Chiao Tung University, Tainan 71150, Taiwan
2
Department of Electro-Optical Engineering, Southern Taiwan University of Science and Technology, Tainan 710, Taiwan
3
Department of Materials Science and Engineering, National Dong Hwa University, Hualien 97401, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Paolo Minzioni
Received: 19 June 2016 / Revised: 31 July 2016 / Accepted: 12 August 2016 / Published: 19 August 2016
(This article belongs to the Special Issue Silicon Photonics Components and Applications)
View Full-Text   |   Download PDF [3086 KB, uploaded 19 August 2016]   |  

Abstract

Titanium oxide (TiO2) films and TiO2/SiNx stacks have potential in surface passivation, anti-reflection coatings and carrier-selective contact layers for crystalline Si solar cells. A Si wafer, deposited with 8-nm-thick TiO2 film by atomic layer deposition, has a surface recombination velocity as low as 14.93 cm/s at the injection level of 1.0 × 1015 cm−3. However, the performance of silicon surface passivation of the deposited TiO2 film declines as its thickness increases, probably because of the stress effects, phase transformation, atomic hydrogen and thermal stability of amorphous TiO2 films. For the characterization of 66-nm-thick TiO2 film, the results of transmission electron microscopy show that the anatase TiO2 crystallinity forms close to the surface of the Si. Secondary ion mass spectrometry shows the atomic hydrogen at the interface of TiO2 and Si which serves for chemical passivation. The crystal size of anatase TiO2 and the homogeneity of TiO2 film can be deduced by the measurements of Raman spectroscopy and spectroscopic ellipsometry, respectively. For the passivating contacts of solar cells, in addition, a stack composed of 8-nm-thick TiO2 film and a plasma-enhanced chemical-vapor-deposited 72-nm-thick SiNx layer has been investigated. From the results of the measurement of the reflectivity and effective carrier lifetime, TiO2/SiNx stacks on Si wafers perform with low reflectivity and some degree of surface passivation for the Si wafer. View Full-Text
Keywords: titanium oxide; atomic layer deposition; anatase; surface passivation; antireflection coating; carrier selective contact; silicon solar cell titanium oxide; atomic layer deposition; anatase; surface passivation; antireflection coating; carrier selective contact; silicon solar cell
Figures

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Yang, Z.-P.; Cheng, H.-E.; Chang, I.-H.; Yu, I.-S. Atomic Layer Deposition TiO2 Films and TiO2/SiNx Stacks Applied for Silicon Solar Cells. Appl. Sci. 2016, 6, 233.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Appl. Sci. EISSN 2076-3417 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top