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Polymers 2017, 9(9), 417; doi:10.3390/polym9090417

Plasma-Based Nanostructuring of Polymers: A Review

Division of Nano & Information Technology, KIST School, Korea University of Science and Technology, Seoul 02792, Korea
Life and Materials Science Research Division, Korea Institute of Science and Technology, Seoul 02792, Korea
Author to whom correspondence should be addressed.
Received: 9 August 2017 / Revised: 30 August 2017 / Accepted: 30 August 2017 / Published: 5 September 2017
(This article belongs to the Special Issue Three-Dimensional Structures: Fabrication and Application)
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There are various fabrication methods for synthesizing nanostructures, among which plasma-based technology is strongly competitive in terms of its flexibility and friendly uses, economy, and safety. This review systematically discusses plasma techniques and the detailed interactions of charged particles, radicals, and electrons with substrate materials of, in particular, polymers for their nanostructuring. Applications employing a plasma-based nanostructuring process are explored to show the advantages and benefits that plasma treatment brings to many topical and traditional issues, and are specifically related to wettability, healthcare, or energy researches. A short perspective is also presented on strategic plans for overcoming the limitations in dimension from surface to bulk, lifetime of surface functions, and selectivity for interactions. View Full-Text
Keywords: plasma technology; nanostructuring; polymers; selective etching; wettability; battery; organic solar cells; biomaterials plasma technology; nanostructuring; polymers; selective etching; wettability; battery; organic solar cells; biomaterials

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Phan, L.T.; Yoon, S.M.; Moon, M.-W. Plasma-Based Nanostructuring of Polymers: A Review. Polymers 2017, 9, 417.

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